• Isoelectronic surface dopants can tune p-n type transport in nanoscale semiconductors. A shift from p-type to n-type conduction is demonstrated for thin Bi 2 Te 3 nanowires. Solution processability maintained during aqueous S 2? treatment ambient. Proposed mechanism based on introduction of a dopant band and Fermi level shift. Thermoelectric devices film transistors are fabricated using these...

Because semiconductor nanowires can transport electrons and holes, they could function as building blocks for nanoscale electronics assembled without the need for complex and costly fabrication facilities. Boron- and phosphorous-doped silicon nanowires were used as building blocks to assemble three types of semiconductor nanodevices. Passive diode structures consisting of crossed p- and n-type ...

in this experimental work the pressure induced phase transformation of silicon and germaniumhas been studied. it was shown that at a particular value of applied pressure, (pt), depending on the sampletemperature, the electrical resistance of the specimen falls off to a metallic state. the main goal of this studywas to find out how the phase transformation pressure, pt, for a p-type silicon vari...

We report electrical measurements of ' a sandwich structure consisting of a niobium electrode in contact with a thin lightly doped n type InGaAs layer. The bottom of the sandwich is a degenerate layer of n-type InGaAs used to collect the current. The semiconductor layers are grown by molecular beam epitaxy (MBB). These three layers are the essence of the proposed superconducting-base, semicondu...

In order to study the electronic properties of single-walled carbon nanotube junctions we have fabricated several devices consisting of two crossed nanotubes with electrical leads attached to each end of each nanotube. We correlate the properties of the junctions with the properties of the individual nanotubes: metal–metal, metal–semiconductor, and semiconductor– semiconductor junctions are all...