Molybdenum oxides have been widely investigated for their broad applications ranging from electronics to energy storage. Photodetectors based on molybdenum trioxide (MoO3), however, were seldom reported owing to their low conductivity and weak photoresponse. Herein we report a photodetector based on single MoO3 nanobelt with wide visible spectrum response by introducing substantial gap states v...

The properties of ultraviolet (UV) photodetector fabricated on TiO2/diamond film were investigated. Single crystal diamond layer was grown on high-pressure-high-temperature Ib-type diamond substrate by microwave plasma chemical vapor deposition method, upon which TiO2 film was prepared directly using radio frequency magnetron sputtering technique in Ar and O2 mixing atmosphere. Tungsten was use...

We experimentally demonstrate an on-chip compact and simple to fabricate silicon Schottky photodetector for telecom wavelengths operating on the basis of internal photoemission process. The device is realized using CMOS compatible approach of local-oxidation of silicon, which enables the realization of the photodetector and low-loss bus photonic waveguide at the same fabrication step. The photo...

Hybrid image sensors combine advantages of the two leading imaging technologies (the fill factor of CCD, and the signal processing of CMOS) via vertical integration. This report derives a simple model for the photodetector of the hybrid image sensor, and the affiliated set of differential equations. This bounded-value problem is subsequently solved numerically in 1D, and a simple analytical mod...

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This dissertation describes our effort on developing a technology of photodetectors for application in chip-level optical communication. The photodetector proposed in this thesis work is the Ge/SOI Photo-Hetero-JFET. It is based on a silicon junction-FET in which the traditional electrical gate is replaced by a photo-active germanium mesa. The silicon channel conductance is then modulated by ne...

Cd(2+) causes deep traps on the surface of CdTe quantum dots (QDs) often leading to a long response time for a photodetector. Poly(3-hexylthiophene) (P3HT) can be used to selectively passivate the Cd(2+) -related deep traps by forming a Cd-S bond, while maintaining the shallow traps. By tailoring the trap depth of the CdTe QDs, a high gain, fast response, and low noise P3HT:CdTe nanocomposite p...

Nanophotonic devices seek to generate, guide, and/or detect light using structures whose nanoscale dimensions are closely tied to their functionality.1,2 Semiconducting nanowires, grown with tailored optoelectronic properties, have been successfully placed into devices for a variety of applications.3–5 However, the integration of photonic nanostructures with electronic circuitry has always been...

Nanoscale antennas sandwiched between two graphene monolayers yield a photodetector that efficiently converts visible and near-infrared photons into electrons with an 800% enhancement of the photocurrent relative to the antennaless graphene device. The antenna contributes to the photocurrent in two ways: by the transfer of hot electrons generated in the antenna structure upon plasmon decay, as ...