نتایج جستجو برای: planar channel
تعداد نتایج: 286466 فیلتر نتایج به سال:
Multichannel superconducting quantum interference device (SQUID) systems based on double relaxation oscillation SQUIDs (DROS) were developed for measuring magnetocardiography (MCG) and magnetoencephalography (MEG) signals. Since DROS provides large fluxto-voltage transfer coefficients, about 10 times larger than the DC SQUIDs, direct readout of the SQUID output was possible using compact roomte...
To determine the transporters responsible for toxic Na(+) influx in wheat (Triticum aestivum), root plasma membrane preparations were screened using the planar lipid bilayer technique as an assay for Na(+)-permeable ion channel activity. The predominant channel in the bilayer was a 44-pS channel that we called the nonselective cation (NSC) channel, which was nonselective for monovalent cations ...
The high temperature dependence of junctionless (JL) gate-all-around (GAA) poly-Si thin-film transistors (TFTs) with 2-nm-thick nanosheet channel is compared with that of JL planar TFTs. The variation of SS with temperature for JL GAA TFTs is close to the theoretical value (0.2 mV/dec/K), owing to the oxidation process to form a 2-nm-thick channel. The bandgap of 1.35 eV in JL GAA TFTs by fitti...
Any planar resistor (channel) close to a conducting layer left floating (gate) forms a capacitor C whose thermal voltage noise (kT/C noise) has a backgating effect on the sheet resistance of the channel that is a powerful source of 1/f resistance noise in planar resistors and, hence, in planar devices. This 1/f spectrum is created by the bias voltage VDS applied to the resistor, which is a dist...
The light-gated ion-channel protein is expected to be able to improve the performance of ionchannel devices for the multi-point screening and neural network devices based on the planar patch clamp. However, no studies with light-gated ion channels on a planar patch clamp have been reported. We constructed an incubation type of planar patch clamp biosensor using silicon-on-insulator substrates w...
In the presence of a low pH environment, the channel-forming T domain of diphtheria toxin undergoes a conformational change that allows for both its own insertion into planar lipid bilayers and the translocation of the toxin's catalytic domain across them. Given that the T domain contributes only three transmembrane segments, and the channel is permeable to ions as large as glucosamine(+) and N...
The current conduction process through a nanowire wrap-around-gate,B50nm channel diameter, silicon MOSFET has been investigated and compared with a B2mm wide slab, B200nm thick silicon (SOI) top-only-gate planarMOSFETwith otherwise similar doping profiles, gate length and gate oxide thickness. The experimental characteristics of the nanowire and planar MOSFETs were compared with theoretical sim...
The current conduction process through a nanowire wrap-around-gate,B50nm channel diameter, silicon MOSFET has been investigated and compared with a B2mm wide slab, B200nm thick silicon (SOI) top-only-gate planarMOSFETwith otherwise similar doping profiles, gate length and gate oxide thickness. The experimental characteristics of the nanowire and planar MOSFETs were compared with theoretical sim...
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