The changes in the electrical and physical properties of HfO2 films grown using atomic layer deposition (ALD) on Si1-XGeX (x=0.1, 0.2, 0.3) substrates after post-annealing have been studied. The migration of Ge plays a key role in reducing the capacitance equivalent thickness (CET) whilst keeping the leakage current density constant after post-annealing. The Ge atoms which have already diffused...

Low temperature fabrication of CdTe (1.25 μm)/CdS (120 nm) thinfilm solar cells was explored using in situ pulsed laser deposition (PLD) in order to control the CdTe grain morphology, crystallinity, and CdS/CdTe interface, which have proven to be crucial in CdTe/CdS solar cell performance. A comparative study was carried out on solar cells fabricated using PLD with the CdTe layer either grown d...

This study investigated carrier compensation induced by thermal annealing in sputtered ZnO:Al (Al₂O₃: 0.25, 0.5, 1.0, and 2.0 wt %) films. The films were post-annealed in a N₂ atmosphere at low (1 × 10-23 atm) and high (1 × 10-4 atm) oxygen partial pressures (PO2). In ZnO:Al films with low Al contents (i.e., 0.25 wt %), the carrier density (n) began to decrease at annealing temperatures (Ta) of...

Conductive carbon films were prepared at room temperature by unbalanced magnetron sputtering (UBMS) on silicon substrates using argon (Ar) gas, and the effects of post-annealing temperature on the structural, tribological, and electrical properties of carbon films were investigated. Films were annealed at temperatures ranging from 400 °C to 700 °C in increments of 100 °C using a rapid thermal a...

Post growth annealing of solution grown ZnO nanowire array is performed under controlled oxygen ambience. The role of annealing over surface defects and their consequence on dark/photo-conductivity and photosensitivity of nanowire array is investigated. Surface defect properties are explored using various measurement tools such as contact angle, photoluminescence, Raman spectroscopy and XPS mea...

A systematic investigation of the properties of the InAs/GaAs self-assembled quantum dots (SAQDs) system subjected to a post-growth annealing using capacitance-voltage, Raman scattering and photoluminescence measurements is presented. The application of both electrical and optical methods allowed us to obtain reliable information on the microscopic structural evolution of this system. The singl...

A high-quality white light source requires high luminous efficacy (lumens per input watt). Theoretically, in the “greenyellow” spectral region (with a peak wavelength at around 555 nm), the luminous efficiency (lumens per radiant watt) reaches a maximum based on the luminous efficiency function, V(λ), and can potentially generate high luminous efficacy. Unfortunately, the light-emitting diode (...

Indium tin oxide (ITO) is widely applied as a transparent conductive oxide coating. A standard and successful industrial route of production is its deposition by magnetron sputtering from a compound (oxide) target [1]. To increase cost efficiency, it would be preferable to sputter reactively from a metal target at sufficiently high partial pressure of oxygen. However, under this condition, a sa...

Quantum annealing is a proposed combinatorial optimization technique meant to exploit quantum mechanical effects such as tunneling and entanglement. Real-world quantum annealing-based solvers require a combination of annealing and classical pre- and post-processing; at this early stage, little is known about how to partition and optimize the processing. This article presents an experimental cas...