interaction and correlation effects in quantum dots play a fundamental role in defining both their equilibrium and transport properties. numerical methods are commonly employed to study such systems. in this paper we investigate the numerical calculation of quantum transport of electrons in spherical centered defect ingaas/algaas quantum dot (scdqd). the simulation is based on the imaginary time...

We study the coupling between a photonic crystal cavity and an off-resonant quantum dot under resonant excitation of the cavity or the quantum dot. Linewidths of the quantum dot and the cavity as a function of the excitation laser power are measured. We show that the linewidth of the quantum dot, measured by observing the cavity emission, is significantly broadened compared to the theoretical e...

The combined effect of hydrostatic pressure and temperature on correlation energy in a triplet state of two electron spherical quantum dot with square well potential is computed. The result is presented taking GaAs dot as an example. Our result shows the correlation energies are i)negative in the triplet state contrast to the singlet state ii) it increases with increase in pressure  iii)further...

Full counting statistics of electron transport is a powerful diagnostic tool for probing the nature of quantum transport beyond what is obtainable from the average current or conductance measurement alone. In particular, the non-Markovian dynamics of quantum dot molecule plays an important role in the nonequilibrium electron tunneling processes. It is thus necessary to understand the non-Markov...

We present investigations of the optical properties of stacked InGaN quantum dot layers and demonstrate their advantage over single quantum dot layer structures. Measurements were performed on structures containing a single layer with quantum dots or threefold stacked quantum dot layers, respectively. A superlinear increase of the quantum dot related photoluminescence is detected with increasin...

The device characteristics of semiconductor quantum dot lasers have been improved with progress in active layer structures. Self-assembly formed InAs quantum dots grown on GaAs had been intensively promoted in order to achieve quantum dot lasers with superior device performances. In the process of growing high-density InAs/GaAs quantum dots, bimodal size occurs due to large mismatch and other f...

Quantum dot solar cells, as a promising candidate for the next generation solar cell technology, have received tremendous attention in the last 10 years. Some recent developments in epitaxy growth and device structures have opened up new avenues for practical quantum dot solar cells. Unfortunately, the performance of quantum dot solar cells is often plagued by marginal photon absorption. In thi...

We report upon the application of quantum dot barcodes prepared by layer-by-layer biological self-assembly of quantum dot-biotin and quantum dot-streptavidin conjugates on magnetic beads for qualitative multiplexed immunoassay.