Related Articles In-well pumping of InGaN/GaN vertical-external-cavity surface-emitting lasers Appl. Phys. Lett. 99, 201109 (2011) Near-field dynamics of broad area diode laser at very high pump levels AIP Advances 1, 042148 (2011) Photonic bandstructure engineering of THz quantum-cascade lasers Appl. Phys. Lett. 99, 201103 (2011) Simulation of quantum cascade lasers J. Appl. Phys. 110, 093109 ...

Related Articles In-well pumping of InGaN/GaN vertical-external-cavity surface-emitting lasers Appl. Phys. Lett. 99, 201109 (2011) Near-field dynamics of broad area diode laser at very high pump levels AIP Advances 1, 042148 (2011) Photonic bandstructure engineering of THz quantum-cascade lasers Appl. Phys. Lett. 99, 201103 (2011) Simulation of quantum cascade lasers J. Appl. Phys. 110, 093109 ...

III-V semiconductor lasers integrated on Si-based photonic platforms are eagerly awaited by the industry for mass-scale applications, from interconnect to on-chip sensing. The current understanding is that only quantum dot can reasonably operate at high dislocation densities generated III-V-on-Si heteroepitaxy, which induces non-radiative carrier recombination rates. Here we propose a strategy ...

A model for the photon noise and the current noise in quantum cascade lasers is presented. It is shown that compared to diode lasers quantum cascade lasers exhibit much less photon-number squeezing even when the noise in the drive current is suppressed well below the shot-noise value. The theoretical model presented in this paper self-consistently accounts for the suppression of the current noi...

We have fabricated photonic crystal nanocavity lasers, based on a high-quality factor design that incorporates fractional edge dislocations. Lasers with InGaAsP quantum well active material emitting at 1550 nm were optically pumped with 10 ns pulses, and lased at threshold pumping powers below 220 mW, the lowest reported for quantum-well based photonic crystal lasers, to our knowledge. Polariza...

Device-performances of 3.7 THz indirect-pumping quantumcascade lasers are demonstrated in an InGaAs/InAlAs material system grown by metal-organic vapor-phase epitaxy. The lasers show a low threshold-current-density of ~420 A/cm and a peak output power of ~8 mW at 7 K, no sign of parasitic currents with recourse to well-designed coupled-well injectors in the indirect pump scheme, and a maximum o...

We review recent advances in the field of quantum dot lasers on silicon. A summary of device performance, reliability, and comparison with similar quantum well lasers grown on silicon will be presented. We consider the possibility of scalable, low size, weight, and power nanolasers grown on silicon enabled by quantum dot active regions for future short-reach silicon photonics interconnects. © 2...