The p-n junction cannot be implemented at the nanoscale because the doping is very often a detrimental effect. The doping could change dramatically the properties of a nanomaterial such as graphene or single-walled carbon nanotubes. Therefore, we will present two graphene diodes without a p-n junction. The first is based on the dissimilar metals having workfunction below and above the graphene ...

Title of Dissertation: DESIGN AND FABRICATION OF ON CHIP MICROWAVE PULSE POWER DETECTORS Woochul Jeon, Doctor of Philosophy, 2005 Directed By: Professor John Melngailis Department of Electrical and Computer Engineering On-chip microwave pulse-power detectors are promising devices for many electrical systems of both military and commercial applications. Most research in microwave power detector ...

Based on mature and high-yield high-voltage (HV) HBT technology monolithically integrated ultra-fast Schottky diodes are developed. The Schottky diodes take full advantage of the optimized HV-HBT layer structure allowing for diode ́s breakdown voltage of 80 V. Due to optimized thermal mounting using priopriatery flip-chip soldering high current switching capability up to 4 A at 60 V was demonstr...

Rev. Introduction Since the introduction of commercial silicon carbide (SiC) Schottky diodes over 10 years ago, significant improvements in power factor correction (PFC) circuits and motor drives have been realized due to the elimination of minority carrier reverse recovery charge and its resulting switching loss associated with traditional PiN diodes. The early adoption of SiC Schottky diodes ...

CdSe nanostructures were synthesized by using green chemical route as starch was used as capping agent. XRD, HR-TEM, SEAD, UV and PL studies were made for structural and optical properties of the prepared sample. Film morphology and the thickness measurement of n-CdSe were carried out with AFM analysis. I-V characteristics curve of this junction confirmed the formation of Schottky contact betwe...

A software program for on-state parameter extraction is presented for the realization of a high quality model for SiC Schottky, Merged PiN Schottky, and PiN Power diodes based on McNutt and Mantooth's Comprehensive SiC Diode model [ 1 ].

Polymer aggregation correlated transition from Schottky-junction to bulk heterojunction organic solar cells" (2014).

Advanced bipolar transistors play a vital role in RF/Microwave applications. But they need to satisfy stringent demands on device performance parameters such as β, gm, and fT. Many of the bipolar technologies developed to meet these demands are vertical structures and suffer from many non−ideal effects at high collector current densities. In the present work, to enhance the performance limits o...

Tantalum silicide (TaSix ) films with different Si to Ta ratios (x) as Schottky contacts to GaAs have been studied. The films were prepared by coevaporation. The metallurgical properties of the film and the stability of the silicide-GaAs interface were studied by x-ray diffraction, Auger electron spectroscopy, and Rutherford backscattering spectroscopy. The films were annealed at various temper...