In this study, effect of immersion time on the electrochemical behaviour of AISI 321 stainless steel (AISI 321) in 0.1 M H 2SO 4 solution under open circuit potential (OCP) conditions was evaluated by potentiodynamic polarization, Mott–Schottky analysis and electrochemical impedance spectroscopy (EIS). Mott–Schottky analysis revealed that the passive films behave as n-type and p-type s...

Present work is an effort to reveal the junction properties of gold (Au) / Zinc oxide (ZnO) nanorods based Schottky diode by using the frequency dependent electrical properties. The most important electrical parameters such as conductance (G), resistance (R), capacitance (C) and impedance (Z) were studied as function of frequency across the series of AC voltages. Moreover, current density-volta...

The localized coupling between piezoelectric and photoexcitation effects of a ZnO micro/nanowire device has been studied for the first time with the goal of designing and controlling the electrical transport characteristics of the device. The piezoelectric effect tends to raise the height of the local Schottky barrier (SB) at the metal-ZnO contact, while photoexcitation using a light that has e...

We report the fabrication of low-leakage rectifying Pt and Au Schottky diodes and Au-gated metal-semiconductor field effect transistors (MESFETs) on n-type SrTiO3 thin films grown by hybrid molecular beam epitaxy. In agreement with previous studies, we find that compared to Pt, Au provides a higher Schottky barrier height with SrTiO3. As a result of the large dielectric constant of SrTiO3 and t...

The Schottky barrier heights of metal contacts, including WSi0.8, Cr, Ti, Pt, and Ni, on n-type gallium nitride GaN with a GaN cap layer grown at low-temperature LTG were studied. Higher barriers can be formed by introducing LTG GaN on top of the conventional structures. The higher Schottky barrier observed in samples with the LTG GaN cap layer may be due to the facts that the high-resistivity ...

A time-dependent effective-mass SchrödingerPoisson solver is used to study the frequency dependence of the gate capacitance of a short Schottky-barrier carbon nanotube field-effect transistor (CNTFET). A delayed (re)charging of the channel causes a (non-quasi-static) drop of the gate capacitance for higher frequencies on a characteristic scale, which can be related to the escape time of the car...

Graphene-semiconductor interface is important for the applications in electronic and optoelectronic devices. Here we report the modulation of the electric transport properties of graphene/ZnO nanowire Schottky diode by gate voltage (Vg). The ideality factor of the graphene/ZnO nanowire Schottky diode is ~1.7, and the Schottky barrier height is ~0.28 eV without external Vg. The Schottky barrier ...

In present scenario high voltage AlGaN/GaN High Electron Mobility Transistors (HEMTs) on Si substrate with Schottky drain contacts were simulated to increase the breakdown voltage by replacing the conventional Ohmic drain contacts. A significant increase in breakdown voltage values was achieved for nonannealed Schottky contacts by elimination of metal spikes underneath drain electrodes. The bre...

Using a metal-semiconductor-metal back-to-back Schottky contacted ZnO microwire device, we have demonstrated the piezoelectric effect on the output of a photocell. An externally applied strain produces a piezopotential in the microwire, which tunes the effective height of the Schottky barrier (SB) at the local contact, consequently changing the transport characteristics of the device. An equiva...