نتایج جستجو برای: semiconducting gallium arsenide

تعداد نتایج: 21601  

Journal: :IEEE Nanotechnology Magazine 2021

Reports on the work Professor Si-Chen Lee who teaches in Department of Electrical Engineering at National Taiwan University. His current research interests include semiconductor device applications such as indium gallium arsenide/indium arsenide quantum dot infrared photodetectors, photonic crystal thermal emitters with probing biological reactions cells, and exhaled gas detection for remote he...

Journal: :Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 1993

پایان نامه :دانشگاه تربیت معلم - تهران - دانشکده شیمی 1386

چکیده ندارد.

Journal: :Bulletin of Materials Science 1990

2005
Y. Sun S. F. Cheng G. Chen R. F. Hicks J. G. Cederberg R. M. Biefeld

The effect of an initial saturation coverage of antimony on the growth of indium arsenide quantum dots on gallium arsenide has been studied during metalorganic vapor-phase epitaxy. After depositing one to two bilayers of InAs at 723 K, the samples were quenched, transferred to ultrahigh vacuum, and characterized by scanning tunneling microscopy and x-ray photoelectron spectroscopy. It has been ...

2010
Wang Zhang Nuri W. Emanetoglu Neal Bambha Justin R. Bickford

A symmetric gain optoelectronic mixer based on an indium gallium arsenide (In0.53Ga0.47As)/indium phosphide (InP) symmetric heterojunction phototransistor structure is being investigated for chirpedAM laser detection and ranging (LADAR) systems operating in the ‘‘eye-safe” 1.55 lm wavelength range. Signal processing of a chirped-AM LADAR system is simplified if the photodetector in the receiver...

2000
Q. Fu L. Li R. F. Hicks

Hydrogen adsorption on the ~234! and ~432! reconstructions of gallium arsenide ~001! has been studied by internal reflectance infrared spectroscopy and ab initio cluster calculations with density-functional theory. The calculations are made on Ga5As4H11,13, Ga4As5H11,13 , and Ga7As8H19 clusters, which model the arsenicand gallium-dimer termination of the semiconductor surface. Excellent agreeme...

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