نتایج جستجو برای: semiconductor nanowire field effect transistor

تعداد نتایج: 2389964  

2017

The IGFET or MOSFET is a voltage controlled field effect transistor that differs from a JFET in that it has a “Metal Oxide” Gate electrode which is electrically insulated from the main semiconductor n-channel or p-channel by a very thin layer of insulating material usually silicon dioxide, commonly known as glass. This ultra thin insulated metal gate electrode can be thought of as one plate of ...

2013
Andreas G. Andreou

The Field Effect Transistor (FET) is today the basic element of Very Large ScaIe Integrated (VLSI) digital systems. FETs are also used in analog circuits for high frequency (microwave) applications. Different types of FETs are the Metal Oxide Semiconductor Field Effect Transistors (MOSFETs), the MEtal Semiconductor Field Effect Transistors (MESFETs) and the MOdulation Doped Field Effect Transis...

2012
Szu-Hung Chen Wen-Shiang Liao Hsin-Chia Yang Shea-Jue Wang Yue-Gie Liaw Hao Wang Haoshuang Gu Mu-Chun Wang

A three-dimensional (3D) fin-shaped field-effect transistor structure based on III-V metal-oxide-semiconductor field-effect transistor (MOSFET) fabrication has been demonstrated using a submicron GaAs fin as the high-mobility channel. The fin-shaped channel has a thickness-to-width ratio (TFin/WFin) equal to 1. The nano-stacked high-k Al2O3 dielectric was adopted as a gate insulator in forming ...

2011
WooSeok Choi Taechang An Geunbae Lim

In this study, we synthesized an organic electrochemical transistor (OECT) using dielectrophoresis of a carbon nanotube-Nafion (CNT-Nafion) suspension. Dielectrophoretically aligned nanowires formed a one-dimensional submicron bundle between triangular electrodes. The CNT-Nafion composite nanowire bundles showed p-type semiconductor characteristics. The drain-source current decreased with incre...

Journal: :Nanotechnology 2009
L Liao Z Zhang B Yan Z Zheng Q L Bao T Wu C M Li Z X Shen J X Zhang H Gong J C Li T Yu

We report the properties of a field effect transistor (FET) and a gas sensor based on CuO nanowires. CuO nanowire FETs exhibit p-type behavior. Large-scale p-type CuO nanowire thin-film transistors (10(4) devices in a 25 mm(2) area) are fabricated and we effectively demonstrate their enhanced performance. Furthermore, CuO nanowire exhibits high and fast response to CO gas at 200 degrees C, whic...

2011
Ping Xie Qihua Xiong Ying Fang Quan Qing Charles M. Lieber

Nanopores could potentially be used to perform single-molecule DNA sequencing at low cost and with high throughput. Although single base resolution and differentiation have been demonstrated with nanopores using ionic current measurements, direct sequencing has not been achieved because of the difficulties in recording very small (∼pA) ionic currents at a bandwidth consistent with fast transloc...

پایان نامه :وزارت علوم، تحقیقات و فناوری - دانشگاه یزد 1387

چکیده ندارد.

Journal: :Nanotechnology 2010
Christina Pang Bin Yan Lei Liao Bo Liu Zhe Zheng Tom Wu Handong Sun Ting Yu

Ternary oxides have the potential to display better electrical and optical properties than the commonly fabricated binary oxides. In our experiments, Zn(2)SnO(4) (ZTO) nanowires were synthesized via thermal evaporation and vapor phase transport. The opto-electrical performance of the nanowires was investigated. An individual ZTO nanowire field-effect transistor was successfully fabricated for t...

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