نتایج جستجو برای: si1

تعداد نتایج: 1017  

2017
Karen Fong Brett LaBossiere Andrea I. M. Switt Pascal Delaquis Lawrence Goodridge Roger C. Levesque Michelle D. Danyluk Siyun Wang

Alfalfa sprouts have been linked to numerous North American outbreaks of Salmonella in recent years. Conventionally, treatments involving chlorine, heat, and irradiation are used for alfalfa seed sanitation. However, such treatments may be highly variable in their efficacy for pathogen control and/or detrimental to sprout quality, therefore negatively perceived by consumers advocating for natur...

2017
Laurival A Vilas-Boas Selwyn A Headley Kátia B Gonçalves Josiane A Scarpassa Lucienne G Pretto-Giordano

The Streptococcus iniae UEL-Si1 strain was isolated from diseased Nile tilapia within the Paranapanema River Basin, Northern Paraná, Brazil. This is an emerging infectious disease agent of fish from Brazil, and sequencing of the complete genome is fundamental to understanding aspects relative to pathogenesis, infection, epidemiology, and immunity.

2011
Yawei Sun Menghong Dai Haihong Hao Yulian Wang Lingli Huang Yassir A. Almofti Zhenli Liu Zonghui Yuan

Active efflux pump is a primary fluoroquinolone resistant mechanism of clinical isolates of Salmonella enterica serovar Typhimurium. RamA is an essential element in producing multidrug resistant (MDR) S. enterica serovar Typhimurium. The aim of the present study was to elucidate the roles of RamA on the development of ciprofloxacin, the first choice for the treatment of salmonellosis, resistanc...

2002
D. N. Basov A. M. Bratkovsky P. F. Henning B. Zink F. Hellman Y. J. Wang M. Strongin

– Carrier dynamics in amorphous a-Si1−xREx (RE = Gd, Y) films has been studied in the doping regime close to the metal-insulator transition by means of infrared spectroscopy. Optical constants throughout the entire intra-gap region ( ω < 1 eV) have been found to be anomalously sensitive to changes of temperature and/or magnetic field. The observed behavior is consistent with the model of hoppin...

2013
M. Kamali Moghaddam

A Silicon tunnel FET with Si1-x Gex source is investigated and optimized for improved performance. In order to optimize the device performance, Germanium mole fraction and the length of the SiGe region is varied and the optimum values are obtained. Moreover, the source/channel hetero-junction is assumed graded. The grading distance is varied from zero (abrupt hetero-junction) to total channel l...

2003
J. K. Freericks

We develop a formalism to solve the multicomponent Falicov–Kimball model with dynamical meanfield theory, allowing for all possible crystal-field couplings (including spin-orbit coupling). We apply these techniques to solve models of the intermediate-valence transition [as seen in YbInCu4 and EuNi2(Si1 xGex)2] in the simple limit of no crystal field or spin-orbit coupling. We show results for t...

2012
B. Endres

Related Articles Probability-current definition in presence of spin-orbit interaction J. Appl. Phys. 111, 07C305 (2012) Measurement of heavy-hole spin dephasing in (InGa)As quantum dots Appl. Phys. Lett. 100, 031906 (2012) All-oxide system for spin pumping Appl. Phys. Lett. 100, 022402 (2012) Spin dephasing in silicon germanium (Si1−xGex) nanowires J. Appl. Phys. 110, 113720 (2011) Hot phonon e...

2006
A. V. Korol A. V. Solov’yov W. Greiner

We report the results of theoretical and numerical analysis of the crystalline undulators planned to be used in the experiments which are the part of the ongoing PECU project. The goal of such an analysis was to define the parameters (different from those pre-set by the experimental setup) of the undulators which ensure the highest yield of photons of specified energies. The calculations were p...

Journal: :Optical Materials 2022

Blue absorbing near infrared (NIR) emitting phosphors are a promising class of materials for phosphor converted NIR LEDs, which can be used in compact spectrometers. Preferably, these have broad emission spectrum and show negligible luminescence quenching at LED operating temperatures (100 °C). Here, we investigated ASc(Si1-xGex)2O6 (A = Li/Na, x 0,0.2,0.4,0.6,0.8,1) solid solutions doped with ...

2014
W. Hourani E. Martinez P. Periwal G. Patriarche F. Bassani J. M. Fabbri T. Baron

Si/Si1-xGex axial heterostructured nanowires (hNW) are under investigation for downscaling of metaloxide-semiconductor field-effect transistors (MOSFETs). New architectures based on vertically aligned nanowires tunnel-FETs are promising candidates for reduced power dissipation and low voltage operation [1]. The axial growth of lattice mismatched heterostructures would allow band-gap engineering...

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