نتایج جستجو برای: sic

تعداد نتایج: 13123  

2013
J Sastre

Background and objective: The use of fractional exhaled nitric oxide (FeNO) concentration has been proposed as a surrogate marker for monitoring airway response to specifi c inhalation challenge (SIC). We investigated the usefulness of FeNO measurements for monitoring airway response to SIC with occupational agents. Material and methods: Workers with suspected occupational asthma were recruited...

2014
Weili Xie Qi Xie Meishan Jin Xiaoxiao Huang Xiaodong Zhang Zhengkai Shao Guangwu Wen

Silicon carbide (SiC), a compound of silicon and carbon, with chemical formula SiC, the beta modification ( β-SiC), with a zinc blende crystal structure (similar to diamond), is formed at temperature below 1700°C. β-SiC will be the most suitable ceramic material for the future hard tissue replacement, such as bone and tooth. The in vitro cytotoxicity of β-SiC nanowires was investigated for the ...

Journal: :international journal of advanced design and manufacturing technology 0
ali reza moradkhani hamid reza baharvandi abbas vafaeesefat mehdi tajdari

abstract: in this study, al 2 o 3 –sic nanocomposites have been fabricated by mixing of alumina powder containing 0.05% weight magnesium oxide and silicon carbide nano powders, followed by hot pressing at 1650 0 c. the mechanical properties of al 2 o 3 -sic nanocomposites containing different volume fraction (2.5, 5, 7.5, 10 and 15%) of nano scale sic particles were investigated and compared wi...

2002
Leon M. Tolbert Burak Ozpineci Syed K. Islam Fang Z. Peng

The superior properties of silicon carbide (SiC) power electronic devices compared with silicon (Si) are expected to have a significant impact on next-generation vehicles, especially hybrid electric vehicles (HEVs). The system-level benefits of using SiC devices in HEVs include a large reduction in the size, weight, and cost of the power conditioning and/or thermal systems. However, the expecte...

2013
Patrick Fiorenza Filippo Giannazzo Lukas K Swanson Alessia Frazzetto Simona Lorenti Mario S Alessandrino Fabrizio Roccaforte

The electrical compensation effect of the nitrogen incorporation at the SiO2/4H-SiC (p-type) interface after thermal treatments in ambient N2O is investigated employing both scanning spreading resistance microscopy (SSRM) and scanning capacitance microscopy (SCM). SSRM measurements on p-type 4H-SiC areas selectively exposed to N2O at 1150 °C showed an increased resistance compared to the unexpo...

A. Nemati K. Arzani M. Azadmand N. Riahi Noori T. Ebadzadeh

In this research the influence of adding SiC on microstructure and electrical properties of ZnO-based Nanocomposite varistors were investigated. SiC was added with amounts of 10-0 mass% to ZnO-based varistor composition. It is found that SiC allows reaching to high threshold voltage with formation of fine-graine...

1999
X. Wang

This paper describes the results of an exploratory study of blanket concepts based on SiC/SiC structure and LiPb breeder. An assessment of the performance of these concepts for advanced power plant application i s presented, key issues are identified, and constraints relating to the SiC/SiC properties are discussed.

1998
Philip G. Neudeck Christian Fazi

Single-shot nanosecond risetime pulse testing of SiC devices is demonstrated to reveal unique and highly crucial device performance information not obtainable by conventional DC and RF electrical testing. This paper describes some strikingly important device behaviors observed during pulse-testing experiments of 4H-SiC pn junction diodes. Specific observations include: 1) a remarkably fast and ...

2009
T. L. Daulton F. J. Stadermann T. J. Bernatowicz S. Amari

Introduction: Submicron-to micron-sized grains of SiC originating from asymptotic giant branch (AGB) stars and supernovae (SN) can be ubiquitous in the matrices of primitive chondrites. Previous work has shown that presolar SiC occurs as three fundamental polytypes or stacking sequences (cubic 3C, hexagonal 2H, and one-dimensionally disordered hexagonal structure designated here ∞H) along with ...

2018
Xinghao Liang Yang Li Qiang Zhao Zheng Zhang Xiaoping Ouyang

Silicon carbide (SiC) is considered as an important material for nuclear engineering due to its excellent properties. Changing the carbon content in SiC can regulate and control its elastic and thermodynamic properties, but a simulation study of the effect of carbon content on the sputtering (caused by the helium ions) of SiC is still lacking. In this work, we used the Monte-Carlo and molecular...

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