The use of high density nanodots (NDs) as a floating gate (FG) in Metal-Oxide-Semiconductor (MOS) memories has been attracting much attention because of its potential advantages over conventional planar FG memories. Semiconducting nanodots can show well-discrete charged states due to quantum confinement and Coulomb blockade effect, which leads to multi-valued memory capability [1]. On the other...

1. ABSTRACT. * A technique incorporating a p+ doping spike at the silicide/Si interface to reduce the effective Schottky barrier of the silicide infrared detectors and thus extend the cutoff wavelength has been developed. In contrast to previous approaches which relied on the tunneling effect, this approach utilizes a thinner doping spike (< 2 nm) to take advantages of the strong Schottky image...

Characterization and modeling of high current conduction in TiSi2 and CoSi2 films formed on n+ Si and n+ polySi under DC and pulsed stress conditions is reported for the first time. High current conductance of silicides is shown to be strongly affected by the technology and process conditions. The non-linear I-V characteristics of silicide films under DC and pulsed high current stress has been ...

Influences on electronic structure induced by platinum (Pt) deposited on monolayer graphene grown on SiC(0001) are investigated by photoelectron spectroscopy (PES), selected area low energy electron diffraction (l-LEED) and angle resolved photoelectron spectroscopy (ARPES) techniques at the MAX Laboratory. Stable monolayer graphene electronic properties are observed after Pt deposition and afte...

A patterning method for the generation of epitaxial CoSi2 nanostructures was developed based on anisotropic diffusion of Co/Si atoms in a stress field during rapid thermal oxidation (RTO). The stress field is generated along the edge of a mask consisting of a thin SiO2 layer and a Si3N4 layer. During RTO of the masked silicide structure, a well-defined separation of the silicide layer forms alo...

A titanium silicide material based on Ti.sub.5 Si.sub.3 intermetallic compound exhibits substantially improved oxidative stability at elevated temperatures. In particular, carbon is added to a Ti.sub.5 Si.sub.3 base material in an amount (e.g. about 0.3 to about 3.6 weight % C) effective to impart substantially improved oxidative stability at elevated temperatures, such as about 1000 Si.sub.3 b...

Au on Si(111) in the 1 x 1 structure for different coverages and in the ~/3 x ~/3R30 °, and the 5 x 1 reconstructions has been studied by means of spin-, angle-, and energy-resolved photoemission. The photoemission studies were performed at normal incidence of the circularly polarized light and normal electron emission. In addition to Auand Si-derived peaks other highly spin-polarized peaks are...

Ion-beam sputtering has been used to prepare Fe/Si multilayers on a variety of substrates and over a wide range of temperatures. Small-angle x-ray diffraction and transmission electron microscopy experiments show that the layers are heavily intermixed although a composition gradient is maintained. When the spacer layer is an amorphous iron silicide, the magnetic properties of the multilayers ar...

The silicide Sc2RuSi2 was synthesized from the elements by arc-melting. The structure was refined on the basis of single crystal X-ray diffractometer data: Sc2CoSi2 type, * Manuscript Click here to view linked References