An accurate prediction of reaction kinetics of silicon nitridation is of great importance in designing procedure of material production and controlling of reaction. The main purpose of the present study is to investigate the effect of temperature on the kinetics of reaction bonded silicon nitride (RBSN) formation. To achieve this, nitrogen diffusion in the silicon nitride layer is considered as...

CMOS platforms operating at the telecommunications wavelength either reside within the highly dissipative two-photon regime in silicon-based optical devices, or possess small nonlinearities. Bandgap engineering of non-stoichiometric silicon nitride using state-of-the-art fabrication techniques has led to our development of USRN (ultra-silicon-rich nitride) in the form of Si7N3, that possesses a...

A hybrid molecular-dynamics (MD) and finite-element simulation approach is used to study stress distributions in silicon/silicon-nitride nanopixels. The hybrid approach provides atomistic description near the interface and continuum description deep into the substrate, increasing the accessible length scales and greatly reducing the computational cost. The results of the hybrid simulation are i...

This paper presents results of a systematic investigation to characterize the sealing of micromachined cavities using chemical vapor deposition (CVD) methods. We have designed and fabricated a large number and variety of surface-micromachined test structures with different etch-channel dimensions. Each cavity is then subjected to a number of sequential CVD deposition steps with incremental thic...

The solubility of nitrogen in liquid silicon equilibrated with silicon nitride and its dependence on the composition of the atmosphere has been studied in the temperature region 1428–1542 C. High purity silicon was melted in silicon nitride crucibles under Ar and N2 atmospheres. The equilibrium was observed to be established within minutes, after which no evolution of the nitrogen content with ...

The presence of capping materials during annealing (activation for example) can substantially impact the silicon junction profiles of Complementary Metal Oxide Semiconductor Field Effect Transistors (CMOSFET), depending on the nature of these layers. In this paper we specifically investigated the boron out-diffusion from a silicon junction into the silicon oxide in presence of a silicon oxide/s...

Dense Silicon nitride was investigated to determine the effect of its microstructural parameters and densification on thermo-mechanical properties and thermal stress resistance to fracture initiation during a hot or cold mechanical and thermal shock testing. The different materials and microstructures were obtained by changing the parameters such as the type of the powder, additive, forming p...

We designed and fabricated free-standing, waveguide-coupled silicon nitride microdisks hybridly integrated with embedded colloidal quantum dots. An efficient coupling of quantum dot emission to resonant disk modes and eventually to the access waveguides is demonstrated. The amount of light coupled out to the access waveguide can be tuned by controlling its dimensions and offset with the disk ed...

Several 3-D multilayer silicon photonics platforms have been proposed to provide densely integrated structures for complex integrated circuits. Amongst these platforms, great interest has been given to the inclusion of silicon nitride layers to achieve low propagation losses due to their capacity of providing tight optical confinement with low scattering losses in a wide spectral range. However...