Microfabricated semiconductor devices are becoming increasingly relevant for detection of biological and chemical components. The integration of active biological materials together with sensitive transducers offers the possibility of generating highly sensitive, specific, selective and reliable biosensors. This paper presents the fabrication of a sensitive, fully depleted (FD), electrolyte-ins...

We present a new approach to remove monolayer graphene transferred on top of a silicon-on-insulator (SOI) photonic integrated chip. Femtosecond laser ablation is used for the first time to remove graphene from SOI waveguides, whereas oxygen plasma etching through a metal mask is employed to peel off graphene from the grating couplers attached to the waveguides. We show by means of Raman spectro...

─We present the design and simulation results of an integrated wavelength demultiplexer. The device’s major components, which include the Silicon-on-insulator (SOI) etched diffraction grating and waveguide integrated InP/InGaAs MSM photodetectors are discussed in detail. The Silicon-on-insulator diffraction grating is fabricated using standard CMOS processes. The photodetectors are integrated o...

In this article, a novel concept is introduced to improve the radio frequency (RF) linearity of partially-depleted (PD) silicon-on-insulator (SOI) MOSFET circuits. The transition due to the non-zero body resistance (RBody) in output conductance of PD SOI devices leads to linearity degradation. A relation for RBody is defined to eliminate the transition and a method to obtain transition-free c...

Our recent results on the demonstration of on-chip mode-division multiplexing functionalities are reviewed, with a special emphasis on the feasibility of nonlinear all-optical signal processing on the silicon-on-insulator (SOI) platform. Mode-selective parametric processes are demonstrated in a 4-mm long SOI waveguide. OCIS codes: (130.3120) Integrated optics devices; (030.4070) Modes; (130.740...

Silicon-on-insulator (SOI) is rapidly emerging as a versatile platform for a variety of integrated nanophotonic components. High density waveguide circuits can be fabricated using standard CMOS processing techniques. However, light detection in the near-infrared wavelength range (1550 nm) is not possible in silicon which is naturally transparent in this region. One possibility for overcoming th...

We report on detailed room-temperature transport properties of a 17 nm thick double-gate silicon-on-insulator (DGSOI) transistor. We find that when the electron gas is transferred between the top and the bottom of the silicon-on-insulator (SOI) layer by changing the gate bias symmetry (i.e., applying the gate biases in a push–pull fashion), while keeping the carrier density constant the maximum...

Silicon-on-insulator (SOI) wafers are nowadays being prominently used for the manufacture of new generation semiconductor devices. In order to maximize the device yield, the device industry is seeking SOI wafers that meet very stringent wafer specifications such as very low wafer bow and warp. An SOI wafer can undergo severe process-induced stresses during its manufacture leading to significant...

In this paper, we present the design and simulation of silicon-on-insulator (SOI) based integrated optic Directional Coupler. Planar waveguide devices based on SOI architecture offer attractive possibility of miniaturization because of the high difference in refractive index between Silicon and SiO2. It has been shown that this technology offers the ability to make devices with sharper bends wi...

MARKS, JEFFERY EARL. SOI for Frequency Synthesis in RF Integrated Circuits. (Under the direction of Dr. Wentai Liu.) The purpose of this research has been to explore the use of the Honeywell silicon on insulator fabrication process for use in a frequency synthesizer. The research includes the fabrication of a frequency synthesizer and ring oscillators which are used to evaluate the fabrication ...