We have developed a method for fabricating epitaxial CoSi2 nanowires using only conventional optical lithography and standard silicon processing steps. This method was successfully applied to ultrathin epitaxial CoSi2 layers grown on Si~100! and silicon-on-insulator substrates. A nitride mask induces a stress field near its edges into the CoSi2 /Si heterostructure and leads to the separation of...

This paper demonstrates a label-free biosensing platform using Silicon-On-Insulator (SOI) micro-racetrack resonators, cascaded such that multiple measurements can be made using a single input and output waveguide and therefore a single detector. The devices are integrated with poly(dimethylsiloxane) microfluidic channels in order to characterize the devices’ sensing properties. Both bulk refrac...

Silicon-based CMOS technology can be scaled well into the nanometer regime. High-performance, planar, ultrathin-body devices fabricated on silicon-on-insulator substrates have been demonstrated down to 15-nm gate lengths. We have also introduced the FinFET, a double-gate device structure that is relatively simple to fabricate and can be scaled to gate lengths below 10 nm. In this paper, some of...

The high-voltage and self-heating behavior of partial-SOI (silicon-on-insulator) LDMOSFETs were studied numerically. Different locations of the silicon window were considered to investigate the electrical and thermal effects. It is found that the potential distribution of the partial-SOI LDMOSFET with the silicon window under the drain is similar to that of standard junction isolation devices. ...

This paper presents a new, simple method of measuring the generation lifetime in SOI (silicon-on-insulator) MOSFETS. Lifetime is extracted from the transient characteristics of MOSFET subthreshold current. Using this technique, generation lifetime was mapped across ®nished SIMOX (separation by implantated oxygen) wafers, BESOI (bonded and etchedback SOI) wafers, and UNIBOND wafers. BESOI materi...

A review of recent progress in hybrid integrated platforms for silicon photonics is presented. Integration of III-V semiconductors onto silicon-on-insulator substrates based on two different bonding techniques is compared, one comprising only inorganic materials, the other technique using an organic bonding agent. Issues such as bonding process and mechanism, bonding strength, uniformity, wafer...

We are presenting the details of the modeling and designing of the optical demultiplexer by using photonic crystals in silicon on insulator system. For this purpose, the band diagram and light propagation inside the photonic crystals are modeled. An effective index is defined for light propagation inside the photonic crystal structure, which reduces the computation time significantly. An eight-...

This brief presents a new, simple method of measuring the generation lifetime in silicon-on-insulator (SOI )MOSFET’s. Lifetime is extracted from the transient characteristics of MOSFET subthreshold current. Using this technique, generation lifetime was mapped across finished Separation by IMplantation of OXygen (SIMOX) wafers and Bonded and Etchedback SOI (BESOI) wafers. BESOI material evaluate...

One– and two-dimensional photonic crystals are obtained by electron beam lithography and reactive ion etching on silicon-on-insulator waveguides. Variable-angle reflectance is measured and calculated in the 0.2–2-eV energy range, giving evidence of the quasi-guided modes of the photonic structure. Photonic bands in the one-dimensional case are determined and compare very well to those calculate...