Porous Silicon (PS) layers have been prepared from p-type silicon wafers of (100) orientation. SEM, XRD, FTIR and PL studies were done to characterize the surface morphological and optical properties of PS. The porosity of the PS samples was determined using the parameters obtained from SEM images by geometric method. The refractive index values of the PS samples as a function of poros...

Combining micro-photoluminescence spectroscopy and photoluminescence excitation spectroscopy, we are able to observe the evolution of the luminescence spectra from crystalline silicon wafers under various excitation wavelengths. By interpreting the relative change of the luminescence spectra, we can detect and examine the distributions of the dislocations, as well as of the defects and impuriti...

Single crystal silicon solar cells are still predominant in the market due to the abundance of silicon on earth and their acceptable efficiency. Different solar-cell structures of single crystalline Si have been investigated to boost efficiency; the heterojunction with intrinsic thin layer (HIT) structure is currently the leading technology. The record efficiency values of state-of-the art HIT ...

We investigate the vibrational properties of perfluororubrene (PF-RUB) in thin films on silicon wafers with a native oxide layer as well as on silicon wafers covered with a self-assembled monolayer and in dichloromethane solution. In comparison with computed Raman and IR spectra, we can assign the molecular modes and identify two molecular conformations with twisted and planar tetracene backbon...

A detailed approach to evaluate the sub-surface damage of diamond wire-sawn monocrystalline silicon wafers relating to the sawing process is presented. Residual stresses, the presence of amorphous silicon and microcracks are considered and related to diamond wire velocity and cutting ability. In particular, the degree of amorphization of the wafer surface is analyzed, as it may affect the etchi...

In this paper a method is proposed to fabricate channels for fluidic applications with a depth in the nanometer range. Channels with smooth and straight sidewalls are constructed with the help of micromachining technology by etching shallow trenches into 〈110〉 silicon using native oxide as a mask material and OPD resist developer as the etchant. Sub-50 nm deep fluidic channels are formed after ...

We have studied the effect of thermal history on iron precipitation behavior in intentionally contaminated Czochralski silicon wafers that contain well-defined precipitation sites for iron, oxide precipitates. Iron precipitation was studied at a temperature range between 600 C and 700 C for various times. The results indicate that iron precipitation is strongly affected by the thermal history o...

The wetting of silicon wafers and silicon wafers coated with alkylsiloxane monolayers by saturated vapors of cyclohexane and methanol were studied using x-ray specular reflection. Differentially heating the substrate surface relative to the temperature of a liquid reservoir was used to probe the disjoining pressure as a function of the film thickness and surface chemistry. Uncoated silicon wafe...