We present nuclear spin relaxation measurements in GaAs epilayers using a new pump-probe technique in all-electrical, lateral spin-valve devices. The measured T(1) times agree very well with NMR data available for T>1 K. However, the nuclear spin relaxation rate clearly deviates from the well-established Korringa law expected in metallic samples and follows a sublinear temperature dependence T(...

BACKGROUND In nanoscale layered S/F1/N/F2/AF heterostructures, the generation of a long-range, odd-in-frequency spin-projection one triplet component of superconductivity, arising at non-collinear alignment of the magnetizations of F1 and F2, exhausts the singlet state. This yields the possibility of a global minimum of the superconducting transition temperature T c, i.e., a superconducting tri...

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Manipulating spin polarization of electrons in nonmagnetic semiconductors by means of electric fields or optical fields is an essential theme of the conceptual nonmagnetic semiconductor-based spintronics. Here we experimentally demonstrate an electric method of detecting spin polarization in monolayer transition metal dichalcogenides (TMDs) generated by circularly polarized optical pumping. The...

When an electric current passes across a potential barrier, the partition process of electrons at the barrier gives rise to the shot noise, reflecting the discrete nature of the electric charge. Here we report the observation of excess shot noise connected with a spin current which is induced by a nonequilibrium spin accumulation in an all-semiconductor lateral spin-valve device. We find that t...

The laminar perovskite Ca3Ru2O7 naturally forms ferromagnetic double layers of alternating moment directions, as in the spin-valve superlattices. The mechanism of the huge magnetoresistive effect in the material has been controversial due to a lack of clear understanding of various magnetic phases and phase transitions. In this neutron diffraction study in a magnetic field, we identify four dif...

Perpendicular hot electron spin-valve effect in a new vacuum bonded magnetic field sensor and spectroscopic measurement tool Douwe Monsma This thesis may be ordered via the homepage of the Information Storage Technology Group Cover: first electrical measurement result of a spin-valve transistor. The collector current is measured as a function of time. An HP4145B is used for measurement and an F...

Nanoscale spin-valve structures with a width as small as 70 nm were fabricated using nanoimprint lithography and ion milling or lift off. The spin-valve multilayers consisting of NiFe~10 nm!/Co~1 nm!/Cu~13 nm!/Co~10 nm!/NiFe~2 nm! were deposited using direct current sputtering. The effects of device size, as well as fabrication process on domain structures, switching fields, switching field var...

The two-dimensional (2D) layered electronic materials of transition metal dichalcogenides (TMDCs) have been recently proposed as an emerging canddiate for spintronic applications. Here, we report the exfoliated single layer WS2-intelayer based spin valve effect in NiFe/WS2/Co junction from room temperature to 4.2 K. The ratio of relative magnetoresistance in spin valve effect increases from 0.1...