For the past five years, strained GaAs photocathodes have been used for the SLAC polarized electron source producing electron beams having a spin polarization of 78% (85%) for high (low) current operation. Photocathode research has been continuously conducted to understand the cathode characteristics and to improve performances. This paper describes the recent developments in the strained photo...

We present the utilization of δ-doping to mitigate the rise in nonlinear gain compression in highly-strained InGaAs VCSELs and compare it with unstrained and undoped active region designs. High speed 25 Gbps operation is also demonstrated. KeywordsVCSELs, optical interconnect, highly-strained, δdoping

In this work, for the first time, the valence band offset, ∆EV, between strained Si and strained Si1-yGey on relaxed Si1-xGex, has been measured using a combination of experimentation and modeling. Such structures have been shown to offer large mobility enhancements for both electrons and holes, and knowledge of the band parameters is critical in order to optimize and predict device behavior [1...

The band structure of strained Si ~4–10 ML! on ~001! GaAs, band lineups of the strained Si/~001!GaAs heterojunction, and confined energy levels of the Si3N4 /Si/GaAs quantum well have been calculated via a pseudopotential method. It has been found that in this technically important Si3N4 /Si/~001!GaAs structure, strained Si has a very narrow band gap ~0.34 eV! at the D' point in the Brillouin z...

The tunneling field-effect transistor (TFET) is one of the most promising candidates for future low-power electronics because of its potential to achieve a subthreshold swing less than the 60 mV/decade thermal limit at room temperature. It can surpass this limit because the turn-on of tunneling does not sample the Maxwell-Boltzmann distribution of carriers that gives rise to the 60 mV/decade li...

PMOS and NMOS mobility characteristics of the dual channel (strained Si/strained Ge) heterostructure have been reviewed. It is shown that the dual channel heterostructure can provide substantially enhanced mobilities for both electrons and holes. However, germanium interdiffusion from the germanium rich buried layer into the underlying buffer layer could potentially reduce the hole mobility enh...

ab initio calculation at hf/6-31g* level of theory for geometry optimization and mp2/6-31g*//hf/6-31g* for a single point total energy calculation are reported for the important energyminimumconformations and transition-state geometries of of cyclodeca-1,2,3-triene (1). the mostfavorable conformation of 1 is a unsymmetrical twist-chair (1-tc) structure. degenerateinterconversion of 1-tc with it...

Sharing and transfer of object references is diicult to control in object-oriented languages. Uncon-strained sharing poses serious problems for writing secure components in object-oriented languages. In this paper, we present a set of inexpensive syntactic constraints that strengthen encapsulation in object-oriented programs and facilitate the implementation of secure systems. We introduce two ...