Organic thin-film transistors (TFTs) are of interest for a variety of large-area electronics applications, such as flexible active-matrix displays and conformable sensor arrays [1]. Among the challenges in the development of high-performance organic TFTs, especially on flexible polymeric substrates, is to realize organic TFTs that simultaneously provide a large field-effect mobility, a large on...

This work presents a comparative analysis of top gate a-IGZO TFTs fabricated on both soda-lime-silica glass and alkali-free borosilicate glass. Low-temperature ALD is selected for the deposition of gate dielectric to minimize a thermal stress. Comparing with TFTs on alkali-free borosilicate glass, TFTs with soda-lime-glass show similar threshold voltage and subthreshold swing, but slightly degr...

This paper reports the performance of an epitaxial layer (ETL) based gate modulated (GM-TFET) through 3D Technology Computer Aided Design (TCAD) simulations. The architecture utilizes effects both vertical tunneling and lateral phenomena to improve device performance. Attributes ETL, its thickness (tepi) doping concentration (Nepi) are varied their impact on electrical parameters such as transf...

The effects of dielectric-annealing gas (O2, N2 and NH3) on the electrical characteristics of amorphous InGaZnO thin-film transistor with HfLaO gate dielectric are studied in-depth, and improvements in device performance by the dielectric annealing are observed for each gas. Among the samples, the N2-annealed sample has a high saturation carrier mobility of 35.1 cm 2 /V∙s, the lowest subthresho...

The exponential rise in the density of silicon CMOS transistors has now reached a limit and threatening to end the microelectronics revolution. To tackle this difficulty, group III–V compound semiconductors due to their outstanding electron transport properties and high mobility are very actively being researched as channel materials for future highly scaled CMOS devices. In this paper, we have...