With an appropriate high anneal temperature under H2 atmosphere, GaN quantum dots (QDs) have been fabricated via GaN thermal decomposition in metal organic chemical vapor deposition (MOCVD). Based on the characterization of atomic force microscopy (AFM), the obtained GaN QDs show good size distribution and have a low density of 2.4 × 10(8) cm(-2). X-ray photoelectron spectroscopy (XPS) analysis...

Self-heating induced failure of graphene devices synthesized from both chemical vapor deposition (CVD) and epitaxial means is compared using a combination of infrared thermography and Raman imaging. Despite a larger thermal resistance, CVD devices dissipate >3x the amount of power before failure than their epitaxial counterparts. The discrepancy arises due to morphological irregularities implic...

In Part II of this paper we present some elementary examples of distributed parameter system model reduction using the techniques described in Part I. In particular, we focus on using the Karhunen-Loeve expansion and Galerkin’s method to formulated reduced order models for a heat diffusion system and temperature field dynamics in a Rapid Thermal Chemical Vapor Deposition reactor. Simulation res...

A model of a three-zone Rapid Thermal Chemical Vapor Deposition (RTCVD) system is developed to study the e ects of spatial wafer temperature patterns and gas-phase reactant depletion on polysilicon deposition uniformity. A sequence of simulated runs is performed, varying the lamp power pro les so that di erent temperature modes are excited. The dominant spatial wafer thermal modes are extracted...

This paper gives some insights in the applications where PECVD nitrides can be introduced to replace the LPCVD layers and how the process parameters need to be varied to obtain the desired properties. Film properties like stress, hydrogen content, wet etch rate and deposition rate are reported. The nitrides are optimized for specific applications and examples on the influence of nitride propert...

The synthesis of singleand double-wall carbon nanotubes by gas flow-modified, catalyst-supported chemical vapor deposition (CCVD) is reported. We have investigated the gas flow condition dependence on the synthesis of carbon nanotubes (CNTs) by placing blocks in the CCVD reactor. Carbon nanotubes having large diameters are preferentially grown under turbulent flow conditions. This indicates tha...