An alternative indium-free material for transparent conducting oxides of fluorine-doped tin oxide [FTO] thin films deposited on polyethylene terephthalate [PET] was prepared by electron cyclotron resonance - metal organic chemical vapor deposition [ECR-MOCVD]. One of the essential issues regarding metal oxide film deposition is the sheet resistance uniformity of the film. Variations in process ...

We report a triple junction InGaP/GaAs/InGaNAs solar cell with efficiency of ~31% at AM0, 25 °C fabricated using a combined molecular beam epitaxy (MBE) and metal-organic chemical vapour deposition (MOCVD) processes. The prototype cells comprise of InGaNAs (Indium Gallium Nitride Arsenide) bottom junction grown on a GaAs (Gallium Arsenide) substrate by MBE and middle and top junctions deposited...

The progress toward integrated photonic devices by selective-area metalorganic chemical vapor deposition (MOCVD) is reviewed. Processing steps involved with fabricating buried heterostructures (BH’s) by a three-step technique are outlined, and a computational model is presented that predicts the enhancement behavior of selective-area MOCVD. Results are reviewed for several discrete and integrat...

All individual phases of the ternary Cr–C–N system including stable and metastable ones can be deposited at low temperature by metalorganic chemical vapor deposition (MOCVD). These growth processes are mainly based on the use of bis(benzene)chromium as chromium source and various co-reactives. Then, from a good control of the reactive gas phase, it is possible to combine these MOCVD processes t...

This work provides comparative studies of a double -doped Al0.3Ga0.7As/InxGa1−xAs/GaAs symmetrically graded x = 0.15 → 0.2 → 0.15 doped-channel field-effect transistor DD-DCFET with respect to a conventional double -doped pseudomorphic high electron mobility transistor pHEMT and a conventional DCFET structure. All threes samples, grown by the low-pressure metallorganic chemical vapor deposition...

AlGaAs/AlGaAs double-heterostructure (DH) visible lasers with low threshold current densities have been grown by metalorganic chemical vapor deposition (MOCVD). Proton-isolated narrow stripe visible lasers have good performance and uniformity of the characteristics over the whole wafer is excellent. Contamination of the undoped AlGaAs depends on the partial pressure ratio of V element to 111 el...

A review is presented describing the development of TiN-CVD from the classical, high temperature T iClm2 process, towards low temperature MOCVD processes. This development is presented from a chemical point of view. In addition to low pressure (LPCVD) and atmospheric pressure (APCVD) thermal processing, also plasma enhanced (PECVD) techniques are described. In the past few years production faci...

Perovskite thin films with various functional properties have been synthesized through the Metal Organic Chemical Vapour Deposition (MOCVD). The MOCVD processes, used for the fabrication of a variety of advanced materials in thin film form, rely upon application of a molten multi-element source. The challenging in-situ strategy involves the use of a molten source consisting of a second-generati...

Abstract We investigated the process parameters of high temperature MOCVD (HT-MOCVD) numerical model for AlN growth based on CFD simulation using orthogonal test design. It is believed that condition favorable improving efficiency and crystallization quality film, while flow field in HT-MOCVD reactor closely related to parameters, which will affect uniformity film. An independently developed co...