This thesis is broadly concerned with the electrical properties of MOS devices with thin (12 nm) nitrided oxide and reoxidized nitrided oxide gate dielectrics and specifically with the reliability and 1/f-noise properties of MOSFETs with such dielectrics. Nitrided oxides are formed by low pressure annealing of thermal silicon dioxide films in ammonia and reoxidized nitrided oxides are formed by...

Polycrystalline tris-odium vanadium(III) nitridotriphosphate, Na3V(PO3)3N, was prepared by thermal nitridation of a mixture of NaPO3 and V2O5. The title compound is isotypic with Na3Al(PO3)3N. In the crystal, the P-atom and the three O-atom sites are on general positions, whereas the Na-, V- and N-atom sites are located on threefold rotation axes. The P atom is coordinated by three O atoms and ...

We theoretically investigate the relationship between impurity diffusion profiles and the underlying atomicscale diffusion mechanisms that occur via intermediate species in elemental semiconductors. We focus particularly on diffusion regimes characterized by short versus long diffusion times and low versus high transport capacities. Based on analytic derivations and numerical simulations, we sh...

Six high temperature alloys have been exposed in N 2 /H environments at 900 °C. In order to study the efficacy of a chromia barrier layer against nitrogen ingress, experiments were performed two having same ratio but slightly different water content, formation being spontaneous one case only. The samples evaluated by SEM/STEM/EDX, XRD, gravimetry and GD-OES. presence an external scale reduced n...

The poor quality of SiC/SiO 2 interface significantly limits the channel mobility, especially in 4H-SiC MOSFETs. Several strategies have been addressed to overcome this issue. Nitridation by NO has adopted widely manufactures because nitrogen may replace carbon some chemical bond at interface. However, excessive nitridation is not desirable pronounced hole-trapping effects near conduction band....

One of the main requirements for ultra-large-scale integration (ULSI) is atomic-order control of process technology. Our concept of atomically controlled processing for group IV semiconductors is based on atomic-order surface reaction control in Si-based CVD epitaxial growth. On the atomic-order surface nitridation of a few nm-thick Ge/about 4 nm-thick Si0.5Ge0.5/Si(100) by NH3, it is found tha...

ZnO nanowires (NWs) with diameters of 50 to 250 nm and lengths of several micrometres have been grown by reactive vapour transport via the reaction of Zn with oxygen on 1 nm Au/Si(001) at 550°C under an inert flow of Ar. These exhibited clear peaks in the X-ray diffraction corresponding to the hexagonal wurtzite crystal structure of ZnO and a photoluminescence spectrum with a peak at 3.3 eV cor...

An accurate prediction of reaction kinetics of silicon nitridation is of great importance in designing procedure of material production and controlling of reaction. The main purpose of the present study is to investigate the effect of temperature on the kinetics of reaction bonded silicon nitride (RBSN) formation. To achieve this, nitrogen diffusion in the silicon nitride layer is considered as...

Fast near-interface (NI) traps have recently been suggested to be the main cause for poor inversion channel mobility in nitrided SiC metal-oxide-semiconductor-field-effect-transistors. Combining capacitance, conductance, and thermal dielectric relaxation current (TDRC) analysis at low temperatures of MOS capacitors, we observe two categories fast slow SiO 2 /4H-SiC interface. TDRC reveals a sup...