نتایج جستجو برای: transition metal dichalcogenide

تعداد نتایج: 436887  

Journal: :Physical review 2022

We develop a minimal theory for the recently observed metal-insulator transition (MIT) in two-dimensional (2D) moir\'e multilayer metal dichalcogenides (mTMD) using Coulomb disorder environment as underlying mechanism. In particular, carrier scattering by random charged impurities leads to an effective 2D MIT approximately controlled Ioffe-Regel criterion, which is qualitatively consistent with...

Journal: :Laser & Photonics Reviews 2022

Transition metal dichalcogenides (TMDs) attract significant attention due to their exceptional optical, excitonic, mechanical, and electronic properties. Nanostructured multilayer TMDs were recently shown be highly promising for nanophotonic applications, as motivated by exceptionally high refractive indices optical anisotropy. Here, this vision is extended more sophisticated structures, such p...

2012
Du Zen Peng Ting-Chang Chang Po-Sheng Shih Hsiao-Wen Zan Tiao-Yuan Huang Chun-Yen Chang Po-Tsun Liu

Related Articles Drift-diffusion model for single layer transition metal dichalcogenide field-effect transistors Appl. Phys. Lett. 101, 243501 (2012) Reduced graphene oxide based flexible organic charge trap memory devices Appl. Phys. Lett. 101, 233308 (2012) Analyzing threshold pressure limitations in microfluidic transistors for self-regulated microfluidic circuits Appl. Phys. Lett. 101, 2341...

2012
Yung-Chun Wu Ting-Chang Chang Chun-Yen Chang Chi-Shen Chen Chun-Hao Tu Po-Tsun Liu

Related Articles Drift-diffusion model for single layer transition metal dichalcogenide field-effect transistors Appl. Phys. Lett. 101, 243501 (2012) Reduced graphene oxide based flexible organic charge trap memory devices Appl. Phys. Lett. 101, 233308 (2012) Analyzing threshold pressure limitations in microfluidic transistors for self-regulated microfluidic circuits Appl. Phys. Lett. 101, 2341...

Journal: :Nanoscale 2017
Xiaofang Chen Liangshuai Zhong Xiao Li Jingshan Qi

In this letter we study the valley degeneracy splitting of the transition-metal dichalcogenide monolayer by first-principles calculations. The local magnetic moments are introduced into the system when the transition-metal atoms are adsorbed on the monolayer surface. The Zeeman effect arising from the local magnetic moment at transition-metal atom sites lifts the valley degeneracy. Anomalous ch...

2015
Agnieszka Kuc Thomas Heine Frank Schwierz

Layered transition-metal dichalcogenides have extraordinary electronic properties, which can be easily modified by various means. Here, we have investigated how the stability and electronic structure of MoS2 monolayers is influenced by alloying, i.e., by substitution of the transition metal Mo by W and Nb and of the chalcogen S by Se. While W and Se incorporate into the MoS2 matrix homogeneousl...

Journal: :Nature nanotechnology 2014
Hongtao Yuan Xinqiang Wang Biao Lian Haijun Zhang Xianfa Fang Bo Shen Gang Xu Yong Xu Shou-Cheng Zhang Harold Y Hwang Yi Cui

The valley degree of freedom in layered transition-metal dichalcogenides provides an opportunity to extend the functionalities of spintronics and valleytronics devices. The achievement of spin-coupled valley polarization induced by the non-equilibrium charge-carrier imbalance between two degenerate and inequivalent valleys has been demonstrated theoretically and by optical experiments. However,...

2016
Wenbin Li Ju Li

Monolayers of transition metal dichalcogenides can exist in several structural polymorphs, including 2H, 1T and 1T'. The low-symmetry 1T' phase has three orientation variants, resulting from the three equivalent directions of Peierls distortion in the parental 1T phase. Using first-principles calculations, we predict that mechanical strain can switch the relative thermodynamic stability between...

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