We have fabricated nanometer-spaced electrodes on electron-transparent silicon nitride membranes. A thin Cr/Au layer is evaporated on the backside of the membrane which serves as a gate electrode. Using these devices, we have performed three-terminal electron transport measurements on gold nano-particles at liquid helium temperature. Coulomb Blockade features have been observed and the capacita...

The junctionless nanowire transistor is a promising alternative for a new generation of nanotransistors. In this letter the atomic force microscopy nanolithography with two wet etching processes was implemented to fabricate simple structures as double gate and single gate junctionless silicon nanowire transistor on low doped p-type silicon-on-insulator wafer. The etching process was developed a...

This article presents gate-voltage controlled humidity sensing performance of vanadium dioxide nanoparticles prepared from NH4VO3 precursor using microwave irradiation technique. The X-ray diffraction, transmission electron diffraction, and Raman analyses reveal the formation of VO2 (B) with V2O5 and an amorphous phase. The BET surface area is found to be 67.67 m2/g. The humidity sensing measur...

In this paper, low threshold voltage (Vt) “natural” transistors, available in some n+/p+ dual poly gate CMOS/ BiCMOS processes [1], are proposed for low voltage switched capacitor circuit design. The impact of the subthreshold off-current of these low devices on the performance of analog switched-capacitor (SC) circuits is analyzed. Methods for reducing the subthreshold offcurrent in analog swi...

Inhibition is commonly thought to suppress neuronal responses, but new discoveries suggest that it may also gate transmission by coordinating the temporal patterning of neuronal responses and so play an important part in information processing in the brain.

A new technique for determining the parasitic source resistance in Heterostructure Field-Effect Transistors (HFET’s) is preManuscript received March 8, 1990; revised April 20, 1990. This work has been partially sponsored by an EECS Special Projects Fund from the MIT and by a TRW Scholarship from the MIT Undergraduate Research Opportunities Program. The review of this brief was arranged by Assoc...

Charge carriers in the quantum Hall regime propagate via one-dimensional conducting channels that form along the edges of a two-dimensional electron gas. Controlling their transmission through a gate-tunable constriction, also called quantum point contact, is fundamental for many coherent transport experiments. However, in graphene, tailoring a constriction with electrostatic gates remains chal...

a complete procedure for the design of w-band low noise amplifier in mmic technology is presented. the design is based on a simultaneously power and noise matched technique. for implementing the method, scalable bilateral transistor model parameters should be first extracted. the model is also used for transmission line utilized in the amplifier circuit. in the presented method, input/output ma...