نتایج جستجو برای: transparent conductive films
تعداد نتایج: 137427 فیلتر نتایج به سال:
An unusual processing scheme has been developed for preparing single-phase cadmium stannate (Cd2SnO4 or CTO) films. Cd2SnO4 transparent conducting oxide (TCO) films have several significant advantages over conventional TCOs when applied to CdS/CdTe thin-film devices. They are more conductive, more transparent, have lower surface roughness, are patternable, and are exceptionally stable. Cd2SnO4-...
Graphene films were produced by chemical vapor deposition (CVD) of pyridine on copper substrates. Pyridine-CVD is expected to lead to doped graphene by the insertion of nitrogen atoms in the growing sp(2) carbon lattice, possibly improving the properties of graphene as a transparent conductive film. We here report on the influence that the CVD parameters (i.e., temperature and gas flow) have on...
MOCVD method has been used to grow optical coatings: Sc2O3 is a high index transparent coating while Ta-doped SnO2 is a transparent conductive oxide. Both films show dense packing and excellent properties. The influence of deposition temperature on the microstructure evolution and optical properties of Sc2O3 films was investigated by X-ray diffraction, scanning electron microscopy and spectroph...
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Transparent and conductive/semiconductive undoped indium oxide (InOx) thin films were deposited at room temperature. The deposition technique used is the radio frequency (rf) plasma enhanced reactive thermal evaporation (rf-PERTE) of indium (In) in the presence of oxygen. The influence of oxygen partial pressure on the properties of these films is presented. The oxygen partial pressure varied b...
Extremely long gold nanowires spontaneously assemble in a water-dimethylsulfoxide (DMSO) solution of Au(SCN)4(-). The Au nanowires were crystalline, exhibited a very high aspect ratio, and, importantly, were produced without co-addition of reducing agents. Transparent conductive films were formed by surface deposition of the nanowires and plasma treatment.
Atomic layer deposition (ALD) of tin oxide (SnOx) films was achieved using a newly synthesized tin precursor and hydrogen peroxide. We obtained highly pure, conductive SnOx films at temperatures as low as 50 C, which was possible because of high chemical reactivity between the new Sn precursor and hydrogen peroxide. The growth per cycle is around 0.18 nm/cycle in the ALDwindow up to 150 C, and ...
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