نتایج جستجو برای: tunnel injection quantum dot tiqd

تعداد نتایج: 497752  

2007
P. Trocha J. Barnaś

Spin-dependent electronic transport through two coupled single-level quantum dots attached to ferromagnetic leads with parallel and antiparallel magnetizations is analyzed theoretically. The intra-dot Coulomb correlation is taken into account, while the inter-dot Coulomb repulsion is omitted. Conductance and tunnel magnetoresistance associated with magnetization rotation are calculated by the n...

Journal: :Physical review letters 2009
Gou Shinkai Toshiaki Hayashi Takeshi Ota Toshimasa Fujisawa

We study coherent dynamics of two spatially separated electrons in a coupled semiconductor double quantum dot (DQD). Coherent oscillations in one DQD are strongly influenced by electronic states of the other DQD, or the two electrons simultaneously tunnel in a correlated manner. The observed coherent oscillations are interpreted as various two-qubit operations. The results encourage searching q...

2006
L. P. Kouwenhoven J. M. Elzerman R. Hanson L. H. Willems van Beveren L. M. K. Vandersypen

We present an overview of experimental steps taken towards using the spin of a single electron trapped in a semiconductor quantum dot as a spin qubit [Loss and DiVincenzo, Phys. Rev. A 57, 120 (1998)]. Fabrication and characterization of a double quantum dot containing two coupled spins has been achieved, as well as initialization and single-shot read-out of the spin state. The relaxation time ...

2013
Da Wei Hai-Ou Li Gang Cao Gang Luo Zhi-Xiong Zheng Tao Tu Ming Xiao Guang-Can Guo Hong-Wen Jiang Guo-Ping Guo

Graphene double quantum dots (DQDs) open to use charge or spin degrees of freedom for storing and manipulating quantum information in this new electronic material. However, impurities and edge disorders in etched graphene nano-structures hinder the ability to control the inter-dot tunnel coupling, tC, the most important property of the artificial molecule. Here we report measurements of tC in a...

Journal: :international journal of nano dimension 0
a. daraei department of physics, faculty of science, university of sistan and baluchestan, zahedan. s. h. hajiemam department of physics, faculty of science, university of sistan and baluchestan, zahedan. a. kazempour nano research centre of payam-e noor university of yazd province, shahedieh, yazd. a. abbasi rostami department of physics, faculty of science, university of sistan and baluchestan, zahedan. m. rahimi aliabad nano research centre of payam-e noor university of yazd province, shahedieh, yazd. m. shokohi department of physics, faculty of science, university of sistan and baluchestan, zahedan. s. ahmadi

in this paper, we investigate variation of the wavelength, intensity and polarization of the self-assembled inas/gaas quantum dots emission by microphotoluminescence spectroscopy at the liquid helium temperature. the microcavity wafer sample is grown by molecular beam epitaxy (mbe) and chemically etched into the micropillar structure (with elliptical cross section - long and short axis 2µm×1.5µ...

A. Azari, K. Seyyedi.S S. Zabihi A.,

A noninteracting quantum-dot arrays side coupled to a quantum wire is studied. Transport through the quantum wire is investigated by using a noninteracting Anderson tunneling Hamiltonian. The conductance at zero temperature develops an oscillating band with resonances and antiresonances due to constructive and destructive interference in the ballistic channel, respectively. Moreover, we have fo...

2005
M. Braun

– We suggest a series of transport experiments on spin precession in quantum dots coupled to one or two ferromagnetic leads. Dot spin states are created by spin injection and analyzed via the linear conductance through the dot, while an applied magnetic field gives rise to the Hanle effect. Such a Hanle experiment can be used to determine the spin lifetime in the quantum dot, to measure the spi...

A. Abbasi Rostami A. Daraei, A. Kazempour M. Rahimi Aliabad M. Shokohi S. Ahmadi S. H. Hajiemam

In this paper, we investigate variation of the wavelength, intensity and polarization of the self-assembled InAs/GaAs quantum dots emission by microphotoluminescence spectroscopy at the liquid helium temperature. The microcavity wafer sample is grown by molecular beam epitaxy (MBE) and chemically etched into the micropillar structure (with elliptical cross section - long and short axis 2µm×1.5µ...

Journal: :Physical review letters 2009
M Baseer Haider Jason L Pitters Gino A DiLabio Lucian Livadaru Josh Y Mutus Robert A Wolkow

It is demonstrated that the silicon atom dangling bond (DB) state serves as a quantum dot. Coulomb repulsion causes DBs separated by less, similar2 nm to exhibit reduced localized charge, which enables electron tunnel coupling of DBs. Scanning tunneling microscopy measurements and theoretical modeling reveal that fabrication geometry of multi-DB assemblies determines net occupation and tunnel c...

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