The dependence of band-to-band tunneling in p+-Si1−xGex /n+-Si1−xGex homojunctions on Ge fraction and electric field is investigated in the range 2–3×108 V/m. Negative differential resistance (NDR) in forward bias is observed for each device with the highest peak tunneling-current density of 8.2 kA/cm2 without any postannealing step. Reverse-biased band-to-band tunneling, as relevant for tunnel...

In this paper, we have developed a model of the tunneling current through a highdielectric stack in MOS capacitors with anisotropic masses. The transmittance was numerically calculated by employing a transfer matrix method and including longitudinal-transverse kinetic energy coupling which is represented by an electron phase velocity in the gate. The transmittance was then applied to calculate ...

We investigate tunneling through a resonant level formed in a carbon nanotube quantum dot contacted by resistive metal wires. These contacts create a dissipative environment for the electrons tunneling across the nanotube, thus suppressing the tunneling rate. We study the shape of the resonant peak in the nanotube conductance, with the expectation that the peak width and height, both dependent ...

Induced tunneling in QFT: soliton creation in collisions of highly energetic particles. Abstract We consider tunneling transitions between states separated by an energy barrier in a simple field theoretical model. We analyse the case of soliton creation induced by collisions of a few highly energetic particles. We present semiclassical, but otherwise first principle, study of this process at al...

The issue of tunneling time is repletewith controversy and paradoxes. The controversy stems from the fact thatmany tunneling time definitions seem to predict superluminal tunneling velocities. One prediction, termed the Hartman effect, states that the tunneling time becomes independent of barrier length for thick enough barriers, ultimately resulting in unbounded tunneling velocities. Experimen...

The problem of inter-band tunneling in a semiconductor (Zener breakdown) in a nonstationary and homogeneous electric field is solved exactly. Using the exact analytical solution, the approximation based on classical trajectories is studied. A new mechanism of enhanced tunneling through static non-onedimensional barriers is proposed in addition to well known normal tunneling solely described by ...

We consider the effect of electron correlations on tunneling from a 2D electron layer in a magnetic field parallel to the layer. A tunneling electron can exchange its momentum with other electrons, which leads to an exponential increase of the tunneling rate compared to the single-electron approximation. The effect depends on the interrelation between the dynamics of tunneling and momentum exch...

Tunneling spectroscopy has developed into a field of intensive research since its first application to superconductors by Giaever [l] in 1961. Subsequently, it was extended to surface studies, mainly through inelastic tunneling spectroscopy [21]. In general, tunneling experiments are performed with metal-insulator-metal (or semiconductor) sandwich structures with a solidstate insulator. This cl...

Induced tunneling in QFT: soliton creation in collisions of highly energetic particles. Abstract We consider tunneling transitions between states separated by an energy barrier in a simple field theoretical model. We analyse the case of soliton creation induced by collisions of a few highly energetic particles. We present semiclassical, but otherwise first principle, study of this process at al...

We study tunneling spectroscopy between a normal metal and an underdoped cuprate superconductor modeled by a phenomenological theory in which the pseudogap is a precursor to the undoped Mott insulator. In the low barrier tunneling limit, the spectra are enhanced by Andreev reflection only within a voltage region of the small superconducting energy gap. In the high barrier tunneling limit, the s...