In this paper we describe the tunneling junction model effect on silicon nanowire gate-allaround field effect transistor using CMOS 45 nm technology. Tunneling effects provides better subthreshold slope, excellent drain induced barrier lowering and superior ION-IOFF ratio.This paper demonstrates the gate controlled tunneling at source of Gate-all-around field effect transistor. Low leakage curr...

In this paper, the electrical characteristics and sensitivity analysis of staggered type p-channel heterojunction electron-hole bilayer tunnel field effect transistor (HJ-EHBTFET) are thoroughly investigated via simulation study. The minimum lattice mismatch between InAs/GaAs0.1Sb0.9 layers besides low carrier effective mass of materials provides high probability ...

A detailed study on the mechanism of band-to-band tunneling in carbon nanotube field-effect transistors (CNFETs) is presented. Through a dual-gated CNFET structure tunneling currents from the valence into the conduction band and vice versa can be enabled or disabled by changing the gate potential. Different from a conventional device where the Fermi distribution ultimately limits the gate volta...

We study the effect of interlayer tunneling in the gauge theory describing a quasitwo-dimensional paramagnetic metal close to a second-order or weakly first-order antiferromagnetic phase boundary. In that theory, two species of fermions have opposite (rather than equal) charges with respect to the gauge field. We find that single-particle interlayer tunneling is suppressed at low energies. The ...

We show that in a magnetic field parallel to a two-dimensional ~2D! electron layer, strong electron correlations can change the rate of tunneling from the layer to the 3D continuum exponentially. It leads to a specific density dependence of the escape rate. The mechanism is a dynamical Mössbauer-type recoil, in which the Hall momentum of the tunneling electron is partly transferred to the whole...

This paper presents an analytical model for the potential distribution of a p-n-i-n tunneling field effect transistor (TFET). Using the potential distribution, the tunneling drain current is derived analytically by integrating the band-to-band tunneling generation rate over the device volume. According to our knowledge, there is no analytical analysis for this structure in the literature, and t...

We show that in ultrasmall superconducting grains any concentration of magnetic impurities or infinitely small orbital effect of magnetic field leads to destruction of the hard gap in the tunneling density of states, and find analytically the exponential tail at low energies. Thus, the tunneling density of states exhibits the "soft gap" behavior. As the energy approaches zero, it vanishes linea...

By applying tensile local uniaxial strain on 5 nm of drain region and compressive local uniaxial strain on 2.5 nm of source and 2.5 nm of channel regions of graphene nanoribbon tunneling field-effect transistor (GNR-TFET), we propose a new bandgap-engineered (BE) GNR-TFET. Simulation of the suggested device is done based on non-equilibrium Green’s function (NEGF) method by a mode-space approach...