A model transistor is de ned and used to understand steady-state electron transport in nanoscale silicon transistors. For this model device, the electric eld pro le is xed and not computed self-consistently from the carrier density pro le. The current versus voltage (I-V) characteristics of the model device as well as the internal carrier density and velocity pro les are computed by solving the...

The aim of the project COUPLET (supported by Institut Farman) is to study the electrothermal effects of the degradation of the metallisation layer of power semiconductor dies. In this first technical report of the project, we describe our work of modeling and simulation of the behavior of a power transistor. The die is represented by four elementary transistors driven by a distributed gate sign...

In this article a low power and low latency 4-2 compressor has been presented. By using modified truth table and Pass Transistor Logic (PTL) a novel structure has been proposed which outperforms previous designs from the frequency of operation view point. The proposed design method has reduced the total transistor count considerably which will lead to reduced power consumption and smaller activ...

This paper presents a methodology for characterizing the random component of transistor mismatch in CMOS technologies. The methodology is based on the design of a special purpose chip which allows automatic characterization of arrays of NMOS and PMOS transistors of different sizes. Up to 30 different transistor sizes were implemented in the same chip, with varying transistors width W and length...

This paper presents a new exact analytical model for Single electron transistor (SET) applicable for circuit simulation. It was developed based on orthodox theory of single electronics using master equation. A scheme was suggested to determine the most probable occupied electron states. The proposed model is more flexible that is valid for single or multi gate, symmetric or asymmetric devices a...

We demonstrate that the conductance through a single-electron transistor at low temperature is in quantitative agreement with predictions of the equilibrium Anderson model. The Kondo effect is observed when an unpaired electron is localized within the transistor. Tuning the unpaired electron’s energy toward the Fermi level in nearby leads produces a crossover between the Kondo and mixedvalence ...

Following the recent development of the Graphene Base Transistor (GBT), a new electrical compact model for GBT devices is proposed. The transistor model includes the quantum capacitance model to obtain a self-consistent base potential. It also uses a versatile transfer current equation to be compatible with the different possible GBT configurations and it account for high injection conditions t...

primary or secondary hyperparathyroidism can present with a brown tumor of the mandible. involvement of other skull and facial bones is extremely rare. only a few cases with brown tumor of the orbital bones have been reported. an is year old girl with primary hyperparathyroidism presented with unilateral exophthalmos caused by brown tumor of the orbital roof, lite patient had a 1.5 cm palpable ...

Abstract—A modeling approach for CMOS gates is presented based on the use of the equivalent inverter. A new model for the inverter has been developed using a simplified transistor current model which incorporates the nanoscale effects for the planar technology. Parametric expressions for the output voltage are provided as well as the values of the output and supply current to be compatible with...

An original scheme for constructing an ultra-wideband single-transistor generator of noise-like oscillations the microwave range wavelengths was proposed. The contains inertial converter output signal a nonlinear amplifier with positive feedback, which modulates supply voltage active element (transistor). experimental model chaotic based on powerful domestic transistor 2T982A-2 operating in sma...