The kinetics of stressed solid-phase epitaxial growth (SPEG), also referred to as solid-phase epitaxy, solidphase epitaxial regrowth, solid-phase epitaxial recrystallization, and solid-phase epitaxial crystallization, of amorphous (a) silicon (Si) created via ion-implantation are reviewed. The effects of hydrostatic, in-plane uniaxial, and normal uniaxial compressive stress on SPEG kinetics are...

Polar II–VI semiconductors can nucleate in complex shapes ranging from nanowires to nanoribbons, nanosaws and multipods. Here we demonstrate the deterministic and fully reproducible shape-selective growth of several morphologies of CdSe and ZnTe nanocrystals by a steady-state vapour transport process. A simple pressure-based precursor-flow shutter excludes any effects of temperature ramping, en...

Low-temperature epitaxial growth of AlN ultrathin films was realized by atomic layer deposition (ALD) together with the layer-by-layer, in-situ atomic layer annealing (ALA), instead of a high growth temperature which is needed in conventional epitaxial growth techniques. By applying the ALA with the Ar plasma treatment in each ALD cycle, the AlN thin film was converted dramatically from the amo...

*Correspondence: Ram K. Gupta, Department of Chemistry, Pittsburg State University, 1701 South Broadway, Pittsburg, KS-66762, USA e-mail: [email protected] Epitaxial tin ferrite (SnFe2O4) thin films were grown using KrF excimer (248 nm) pulsed laser deposition technique under different growth conditions. Highly epitaxial thin films were obtained at growth temperature of 650°C. The quality a...

Microbial contaminant degradation may either result in the utilization of the compound for growth or act as a protective mechanism against its toxicity. Bioavailability of contaminants for nutrition and toxicity has opposite consequences which may have resulted in quite different bacterial adaptation mechanisms; these may particularly interfere when a growth substrate causes toxicity at high bi...

The effect of a secondary copper selenide phase that appears during epitaxial growth of CuInSe2 (CIS) films on (1 0 0) GaAs substrates was investigated. CIS films with different copper to indium molar ratios were deposited on (1 0 0) GaAs substrates at 360 1C by migration-enhanced epitaxy. Films grown under In-rich conditions were polycrystalline, whereas films grown with a Cu-rich composition ...

a Epitaxial growth of rhombohedral boron nitride (r-BN) on different polytypes of silicon carbide (SiC) is demonstrated using thermally activated hot-wall chemical vapour deposition and triethyl boron and ammonia as precursors. With respect to the crystalline quality of the r-BN films, we investigate the influence of the deposition temperature, the precursor ratio (N/B) and the addition of a mi...

BACKGROUND Use of essential oils for controlling Candida albicans growth has gained significance due to the resistance acquired by pathogens towards a number of widely-used drugs. The aim of this study was to test the antifungal activity of selected essential oils against Candida albicans in liquid and vapour phase and to determine the chemical composition and mechanism of action of most potent...