This paper proposes a new technique to engineer the Fin channel in vertical GaN FinFET toward straight and smooth sidewall. Consequently, wet etching TMAH solution is detailed; we found that m-GaN plane has lower surface roughness than crystallographic planes with other orientations, including a-GaN plane. The grooves slope (Cuboids) at base are also investigated. agitation does not assist Cubo...

The reactive ion etching of quartz and Pyrex substrates was carried out using CF4 /Ar and CF4 /O2 gas mixtures in a combined radio frequency ~rf!/microwave ~mw! plasma. It was observed that the etch rate and the surface morphology of the etched regions depended on the gas mixture ~CF4 /Ar or CF4 /O2), the relative concentration of CF4 in the gas mixture, the rf power ~and the associated self-in...

Using a combination of low-pressure oxygen and high temperatures, isotropic and anisotropic silicon (Si) etch rates can be controlled up to ten micron per minute. By varying the process conditions, we show that the vertical-to-lateral etch rate ratio can be controlled from 1:1 isotropic etch to 1.8:1 anisotropic. This simple Si etching technique combines the main respective advantages of both w...

are maintained. If the etching depth is equal to an integral number of half-wavelengths, uniformly high reflectivity across the active L. Fan, M.C. Wu, H.C. Lee and P. Grodzinski . mesa is achieved. The top electrodes which simultaneously pump the phase-shifted and non-phase-shifted region are then deposited by evaporation and lift-off processes. Fig. 2 shows the scanning electron micrograph (S...

An optical interconnection system is being developed to provide vertical, digital data channels for stacked multichip modules. A key component of the system is an array of individually addressable verticalcavity surface-emitting lasers with diffractive lenses integrated into the substrate to control beam divergence and direction. The lenses were fabricated by direct-write e-beam lithograpliy an...

Vertical mirrors have been fabricated with chemically assisted ion beam etching (CAIBE) on OMVPE grown InGaN/AlGaN laser diode structures. AFM measurements show that smooth vertical sidewalls are obtained which exhibit a root mean squared (rms) roughness of only 40—60 A _ . The inclination angle of the etched mirrors is within $2° of vertical, as SEM studies indicate. Photopumping measurements ...

Gallium nitride (GaN) is a promising material for next-generation high-power applications due to its wide bandgap, high breakdown field, high electron mobility, and good thermal conductivity. From a structure point of view, the vertical device is more suitable to high-power applications than planar devices because of its area effectiveness. However, it is challenging to obtain a completely upri...

A silicon nanocrystals (Si-ncs) conjugated-polymer-based bulk-heterojunction represents a promising approach for low-cost hybrid solar cells. In this contribution, the bulk-heterojunction is based on Si-ncs prepared by electrochemical etching and poly(3-hexylthiophene) (P3HT) polymer. Photoelectric properties in parallel and vertical device-like configuration were investigated. Electronic inter...

A 1500 mm 1200 mm scanning mirror having vertical comb fingers has been fabricated by using silicon-on-insulator (SOI)-based fabrication processes. It is a vertically driven electrostatic scanner and composed of two structures having vertical comb fingers. The comb fingers are etched by deep inductively coupled plasma reactive ion etching (ICPRIE) and assembled by the flip chip aligner bonder. ...