A high-current, wide-band transconductance amplifier is described that provides an unprecedented level of output current at high frequencies with exceptional stability. It is capable of converting a signal voltage applied to its input into a groundreferenced output rms current up to 100 A over a frequency range from dc to 100 kHz with a useable frequency extending to 1 MHz. The amplifier has a ...

A complete procedure for the design of W-band low noise amplifier in MMIC technology is presented. The design is based on a simultaneously power and noise matched technique. For implementing the method, scalable bilateral transistor model parameters should be first extracted. The model is also used for transmission line utilized in the amplifier circuit. In the presented method, input/output ma...

A digital look-up table adaptive predistortion technique using a six-port receiver for power amplifier linearization is presented. The system is designed in Ka-band for a DVB-S2 satellite link. We use a six-port receiver at the linearizationloop in place of classic heterodyne receivers. The six-port receiver is implemented by the use of passive microwavecircuits and detector diodes. This approa...

A novel low noise trans-impedance amplifier is proposed using low cost 0.18 µm CMOS technology. A resistive-capacitive feedback is used to extend the bandwidth of the amplifier. As the structure is inductor less, it is suitable for low cost integrated optical interconnects. In this paper Improved Particle Swarm Optimization have applied to determine optimal trans-resistance and noise of propose...

In this paper, a high-power amplifier integrated circuit (IC) in gallium-nitride (GaN) on silicon (Si) technology is presented at W-band (75–110 GHz). order to mitigate the losses caused by relatively high loss tangent of Si substrate compared carbide (SiC), low-impedance microstrip lines (20–30 Ω) are adopted impedance matching networks. They allow for transformation between 50 Ω and very low ...

Integration of multi-mode multi-band transceivers on a single chip will enable low-cost millimeter-wave systems for next-generation automotive radar sensors. The first dual-band millimeter-wave transceiver operating in the 22–29-GHz and 77–81-GHz short-range automotive radar bands is designed and implemented in 0.18m SiGe BiCMOS technology with of 200/180 GHz. The transceiver chip includes a du...

In this paper, we address the performance optimization of Holmium doped fiber amplifier (HDFA) for optical communications in 2–2.15 ?m wavelength range based on a single in-band forward pump source. The HDFA is analyzed with help theoretical simulations by considering an optimized length (HDF), doping concentration Ho3+, and power. impact signal power gain, amplified spontaneous emission (ASE) ...