Thermally induced conductance jumps of metal nanowires are modeled using stochastic Ginzburg-Landau field theories. Changes in radius are predicted to occur via the nucleation of surface kinks at the wire ends, consistent with recent electron microscopy studies. The activation rate displays nontrivial dependence on nanowire length, and undergoes first- or second-order-like transitions as a func...

Finite length of a one channel wire results in crossover from a Tomonaga-Luttinger to Fermi liquid behavior with lowering energy scale. In condition that voltage drop (V) mostly occurs across a tunnel barrier inside the wire we found coefficients of temperature/voltage expansion of low energy conduc-tance as a function of constant of interaction, right and left traversal times. At higher voltag...

a series of subsonic wind tunnel tests was conducted on an ogive-cylinder-flare configuration at zero angle of attack to study the effects of small helical protuberances on viscous drag reduction behavior. the experiments have been carried out on a smooth model and two wire-wrapped models with different spacing between the helical riblet rings, known as pitch length. in the present experiments,...

We study the electron transport through a quantum wire under the influence of external time-dependent gate voltages. The wire is modeled by a tight-binding Hamiltonian for which we obtain the current from the corresponding transmission. The numerical evaluation of the dc current reveals that for bichromatic driving, the conductance depends sensitively on the commensurability of the driving freq...

In the physical designing of the chip, placement is one of the most important steps in the design flow, this paper gives the basic overview of the placement algorithms being used with shrinking technology node for the automatic placement of cells which gives an optimized design in terms of chip area, speed and cost. Basically the emphasis will be on recent trends of Wire-length driven placement...

Based on Rent’s Rule, a well-established empirical relationship, a rigorous derivation of a complete wire-length distribution for on-chip random logic networks is performed. This distribution is compared to actual wire-length distributions for modern microprocessors, and a methodology to calculate the wire-length distribution for future gigascale integration (GSI) products is proposed.

We study solar cell properties of single silicon wires connected at their ends to two dissimilar metals of different work functions. Effects of wire dimensions, the work functions of the metals, and minority carrier lifetimes on short circuit current as well as open circuit voltage are studied. The most efficient photovoltaic behavior is found to occur when one metal makes a Schottky contact wi...

fab-less business model in semiconductor industry has led to serious concerns about trustworthy hardware. in untrusted foundries and manufacturing companies, submitted layout may be analyzed and reverse engineered to steal the information of a design or insert malicious trojans. understanding the netlist topology is the ultimate goal of the reverse engineering process. in this paper, we propose...

ion level – 1. Circuit/chip Timing, power – 2. Device Vt, Ioff – 3. Physical Le, NA Vdd, T Figure DESN11 Possible Variability Abstraction Levels In this framework, the modeling process can be symbolically described as Δ outputs = model (Δ inputs) [1] Based on published approximated models, this model is based on a simplified gate + wire circuit slice where parameters are decomposed into gate-re...