The effects of annealing temperatures on composition and strain in SixGe1-x, obtained by rapid melting growth of electrodeposited Ge on Si (100) substrate were investigated. Here, a rapid melting process was performed at temperatures of 1000, 1050 and 1100 °C for 1 s. All annealed samples show single crystalline structure in (100) orientation. A significant appearance of Si-Ge vibration mode pe...

به‌منظور تحلیل نوترونیک قلب رآکتورها، نیاز به توسعه نرم‌افزارهای محاسبات هسته‌ای جهت تولید ثابت‌های چند گروهی و حل عددی معادله پخش است. برای این منظور، از روش‌هایی استفاده می‌شود که علاوه بر دقت مناسب حجم زمان بهینه‌ای برخوردار باشند. در پژوهش تئوری حاکم روش نودال بسط شار جریان متوسط هم‌چنین مرتبه‌های بالاتر پرداخته می‌شود. پس‌ازآن با گسسته‌سازی نوترون، نشان داده روش‌ بهینه خوبی بهره می‌برد. مس...

INTRODUCTION Disturbed gastric emptying (GE) occurs commonly in critically ill patients. Admission diagnoses are believed to influence the incidence of delayed GE and subsequent feed intolerance. Although patients with burns and head injury are considered to be at greater risk, the true incidence has not been determined by examination of patient groups of sufficient number. This study aimed to ...

Using the first-principles total energy method, we calculate surface energies, surface stresses, and their strain dependence of the Ge-covered Si 001 and 105 surfaces. The surface energy of the Si 105 surface is shown to be higher than that of Si 001 , but it can be reduced by the Ge deposition, and becomes almost degenerate with that of the Ge/Si 001 surface for three-monolayer Ge coverage the...

The mol-ecule of the title compound, C40H42Ge4, lies with its central Ge-Ge bond on an inversion centre giving rise to a zigzag backbone of four tetra-hedrally coordinated Ge atoms. The symmetrically independent Ge-Ge bonds are slightly shorter than in other organo-tetra-germanes whereas the Ge-CPh (Ph = phen-yl) and Ge-CMe (Me = meth-yl) distances have their usual values. In the crystal, (010)...

The extension of SiGe technology towards new electronic and optoelectronic applications on the Si platform requires that Ge-rich nanostructures be obtained in a well-controlled manner. Ge deposition on Si substrates usually creates SiGe nanostructures with relatively low and inhomogeneous Ge content. We have realized SiGe nanostructures with a very high (up to 90%) Ge content. Using substrate p...

Varicella-zoster virus (VZV) encodes a functional cell membrane Fc receptor called glycoprotein gE. VZV gE resembles other mammalian cell membrane receptors, such as the mammalian Fc receptor. In further analyses by transient transfection, the cellular trafficking of VZV gE was compared to other cell surface receptors. VZV gE was shown to undergo endocytosis from the cell membrane when visualiz...

Here, we report the synthesis of Si(x)Ge(1-x) nanowires with x values ranging from 0 to 0.5 using bulk nucleation and growth from larger Ga droplets. Room temperature Raman spectroscopy is shown to determine the composition of the as-synthesized Si(x)Ge(1-x) nanowires. Analysis of peak intensities observed for Ge (near 300 cm(-1)) and the Si-Ge alloy (near 400 cm(-1)) allowed accurate estimatio...

The adsorption of hydrogen on Ge 001 has been studied with scanning tunneling microscopy at 77 K. For low doses 100 L a variety of adsorption structures has been found. We have found two different atomic configurations for the Ge-Ge-H hemihydride and a third configuration that is most likely induced by the dissociative adsorption of molecular hydrogen. The Ge-Ge-H hemihydride is either buckled ...