Capacitance of graphene bilayer as a probe of layer-specific properties. Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. The MIT Faculty has made this article openly available. Please share how this access benefits you. Your story matters. The unique capabilities of capacitance mea...

An integrated capacitance bridge for high-resolution, wide temperature range quantum capacitance measurements Arash Hazeghi, 2 Joseph A. Sulpizio, 3 Georgi Diankov, David Goldhaber-Gordon, a) and H.S. Philip Wong These authors contributed equally to this work Department of Electrical Engineering, Stanford University Department of Physics, Stanford University Department of Chemistry, Stanford Un...

Numerical simulations are used to guide the development of a simple analytical theory for ballistic field-effect transistors. When two-dimensional (2-D) electrostatic effects are small (and when the insulator capacitance is much less than the semiconductor (quantum) capacitance), the model reduces to Natori’s theory of the ballistic MOSFET. The model also treats 2-D electrostatics and the quant...

The experimental characterization of gate capacitance in nanoscale devices is challenging. We report an application of the charge-based capacitance measurement (CBCM) technique to measure the gate capacitance of a single-channel nanowire transistor. The measurement results are validated by 3-D electrostatic computations for parasitic estimation and 2-D self-consistent sp3s∗d tight-binding compu...

This paper formulates a simple matrix-based solution to estimate the voltage-dependent capacitance of a weakly nonlinear device at microwave and millimeter wave frequencies. Unlike other approaches, which rely on the direct capacitance measurement at different bias voltages, the proposed technique generates a large signal model for the capacitance directly from the frequency domain measurement ...

A methodology for combined modeling of capacitance and force in a multi-layer electrostatic comb is demonstrated in this paper. Conformal mapping-based analytical methods are limited to 2D symmetric cross-sections and cannot account for charge concentration effects at corners. Vertex capacitance can be higher than 30% of the total capacitance in a single-layer 2 μm thick comb with 10 μm overlap...

In this paper we look at the quantitative picture of fringing field efSects by use of high-k dielectrics on the 70 nm node CMOS technologies. By using Monte-Carlo based techniques, we extract the degradation in gate-to-channel capacitance and the internal, external fringing capacitance components for varying values of K. Our results clearly show the decrease in external fringing capacitance, in...

Universidad Autónoma de Zacatecas 13.1 Equivalent Circuit ........................................................... 13-1 13.2 Resistance ......................................................................... 13-2 Frequency Effect . Temperature Effect . Spiraling and Bundle Conductor Effect 13.3 Current-Carrying Capacity (Ampacity) ........................ 13-5 13.4 Inductance and Inductive...

Decoupling capacitors (decap) are often used to filter out noise in the power distribution system (PDS). Decaps acts as a local source of energy for a short period. With the scaling of CMOS technologies the power supply voltage is lowered, clock frequency has gone up, and more functionality is integrated on-chip resulting in higher simultaneous switching noise (SSN). As a result signal integrit...

Since the early 1950s, microwave circuits have evolved from discrete circuits to planar integrated circuits, then to multilayered and three-dimensional integrated circuits. With the increased circuit density, the multiconductor line in multilayered dielectric media has become the major form of the transmission line or interconnect. Multilayered routing reduces the area as well as the volume of ...