zno nanowires with a diameter of 70 nm and nanorods with a diameter in the range of 100-150 nm and two micrometer in length were grown on glass substrates by resistive evaporation method and applying a two step oxidation process at low temperatures, without using any catalyst, template or buffer layer. xrd pattern of these nanostructures indicated a good crystallinity property with wurtzite hex...

Resistive memory materials and devices (often called memristors) are an area of intense research, with metal/metal oxide/metal resistive elements a prominent example of such devices. Electroforming (the formation of a conductive filament in the metal oxide layer) represents one of the often necessary steps of resistive memory device fabrication that results in large and poorly controlled variab...

◮ We study Scrape-Off Layer (SOL) turbulence through simulations that evolve the plasma dynamics as the interplay of plasma source from the core, perpendicular transport, and losses at the limiter plates ◮ We identify the SOL turbulence regimes, defining the regions of existence of the Ballooning Modes [resistive (RBM) and inertial (IBM)] and the Drift Waves [resistive (RDW) and inertial (IDW)]...

HfOx based Resistive Random Access Memory (RRAM) is one of the most widely studied material stack due to its promising performances as an emerging memory technology. In this work, we systematically investigated the effect of metal capping layer by preparing sample devices with varying thickness of Ti cap and comparing their operating parameters with the help of an AgilentB1500A analyzer. Keywor...

Resistive switching devices have garnered significant consideration for their potential use in nanoelectronics and non-volatile memory applications. Here we investigate the nonlinear current-voltage behavior and resistive switching properties of composite nanoparticle films comprising a large collective of metal-insulator-metal junctions. Silver nanoparticles prepared via the polyol process and...

Resistive switching effect in transition metal oxide (TMO) based material is often associated with the valence change mechanism (VCM). Typical modeling of valence change resistive switching memory consists of three closely related phenomena, i.e., conductive filament (CF) geometry evolution, conduction mechanism and temperature dynamic evolution. It is widely agreed that the electrochemical red...

BiFeO3 based MIM structures with Ti-implanted Pt bottom electrodes and Au top electrodes have been fabricated on Sapphire substrates. The resulting metal-insulator-metal (MIM) structures show bipolar resistive switching without an electroforming process. It is evidenced that during the BiFeO3 thin film growth Ti diffuses into the BiFeO3 layer. The diffused Ti effectively traps and releases oxyg...

A micro-fabricated metal-oxide based conductometric pH sensor is designed and fabricated in this manuscript. pH sensors have applications in various areas from farming to food processing, human health monitoring, industrial waste products investigation, etc. Accordingly, there is a relatively high demand for a reliable, rapid and precise pH sensor in the market. Relatively precise pH sensors ha...

Ordered Hypothesis Machines (OHM) are large margin classifiers that belong to the class of Generalized Stack Filters which were originally developed for non-linear signal processing. In previous work we showed how OHM classifiers are equivalent to a variation of Nearest Neighbor classifiers, with the advantage that training involves minimizing a loss function which includes a regularization par...