Isabelle is a generic theorem prover, designed for interactive reasoning in a variety of formal theories. At present it provides useful proof procedures for Constructive Type Theory, various first-order logics, Zermelo-Fraenkel set theory, and higher-order logic. This survey of Isabelle serves as an introduction to the literature. It explains why generic theorem proving is beneficial. It gives ...

BACKGROUND High-resolution transnasal esophagoscopy (TNE) allows comprehensive, in-office examination of the esophagus without sedation. OBJECTIVE To compare the authors' present experience using TNE with our initial, previously reported experience. METHODOLOGY Retrospective review of 611 consecutive patients undergoing TNE was compared with 100 consecutive patients previously reported. R...

We report annealing studies of thin films of GaN and GaN:O prepared by ion assisted deposition. As-prepared films of stoichiometric tetrahedrally bonded GaN form nanocrystalline networks, but amorphous networks result with the inclusion of more than 10 at.% of oxygen. The annealed nc-GaN films show an increased average crystallite size, though even after a 700 C anneal the crystals are no large...

The first programming manual [WWG51] was produced in 1951 by Wilkes, Wheeler and Gill. It was a carefully written scientific report, providing an account of distilled experience for the tiny global community of programmers [CK11]. Now 60 years later, we wonder whether there is still a need to write traditional programming manuals at all [SH01]? If there is, can we crowd-source the production by...

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Seepage-face boundaries are common features of unconfined ground water flow. These boundaries exist at the intersection of an unconfined aquifer and a surface water body such as a lake, river, or wetland. The existence of a seepage-face boundary is necessary to provide a physical transition between the internal water-table boundary and the external equipotential boundary when an unconfined aqui...

About 500-nm-thick films of Ge,-,,6Sic64 and Ge o.28Si0.72 grown epitaxially on ( 100)Si have been oxidized at 700 “C in wet ambient. A uniform Ge,Sit -,O, oxide layer forms with a smooth interface between it and the unoxidized Ge$i, _ X layer below. The composition and structure of that layer remains unchanged as monitored by backscattering spectrometry or cross-sectional transmission electron...