Two simple class-F NVI1VIIC power amplifiers are described using 0.7tm field-plated GaN HEMT devices. One circuit was designed for operation at 2.0 GHz and achieved a power-added-efficiency of 50%, 38 dBm output power, and 6.2 W/mm power density. A second circuit was designed at 2.8 GHz and achieved a PAE of 46% with 37 dBm output power and 7.0 W/mm power density.

This technical note presents a simplified method for quantifying the added mass of soil that is mobilised as part failure mechanism around foundation during rapid loading, and resulting additional resistance. focuses on solutions an embedded plate anchor, which potential system offshore floating facilities. In current practice, only shear strength surrounding considered in calculations ultimate...