نتایج جستجو برای: aluminum nitride nanocluster

تعداد نتایج: 65099  

2013
Hsiao-Chi Lu Yu-Chain Peng Meng-Yeh Lin Sheng-Lung Chou Jen-Iu Lo Bing-Ming Cheng

At the vacuum-ultraviolet (VUV) beam line of a synchrotron, an end station for photoluminescence (PL) coupled to a system to detect absorption is used to investigate the luminescence and absorption of materials. We analyzed a CVD diamond window in wavelength range 160 250 nm at 300 and 14 K. The PL excited with VUV light enabled an identification of nitrogen defects in diamond samples. The VUV ...

2014
Mikhail Y. Shalaginov Vadim V. Vorobyov Jing Liu Marcello Ferrera Alexey V. Akimov Alexei Lagutchev Andrey N. Smolyaninov Vasily V. Klimov Joseph Irudayaraj Alexander V. Kildishev Alexandra Boltasseva Vladimir M. Shalaev

P A P ER Abstract The broadband enhancement of single–photon emission from nitrogen-vacancy centers in nanodiamonds coupled to a planar multilayer metamaterial with hyperbolic dispersion is studied experimentally. The metamaterial is fabricated as an epitaxial metal/dielectric superlattice consisting of CMOS-compatible ceramics: titanium nitride (TiN) and aluminum scandium nitride (AlxSc1-xN). ...

2005
Yang Liu Yi-Feng Wang Timofey G. Gerasimov Kenneth H. Heffner Julie P. Harmon

This work encompasses the development of low-viscosity cyclic oligomer underfill formulations that cure without heat evolution. Boron nitride, silica-coated aluminum nitride, and alumina ceramic powders were used as fillers in cyclic butylene terephthalate oligomer melts. The melts were heated with a suitable catalyst to induce polymerization. The effects of the filler type and composition on t...

2011
Lin’an Yang Hanbing He Wei Mao Yue Hao

We report on a simulation for terahertz aluminum gallium nitride (AlGaN)/gallium nitride (GaN) resonant tunneling diode (RTD) at room temperature by introducing deep-level defects into the polarized AlGaN/GaN/AlGaN quantum well. Results show that an evident degradation in negative-differential-resistance characteristic of RTD occurs when the defect density is higher than 10 cm , which is consis...

2016
Gianluca Piazza

This article summarizes the most recent technological developments in the realization of integrated aluminum nitride (AlN) piezoelectric microelectromechanical system (MEMS) for radio frequency (rf) front ends to be employed in next generation wireless communication devices. The AlN-based resonator and switch technologies are presented, their principle of operation explained, and some key exper...

Aluminum alloys such as Al 5083 have primary potential for lightweight structural application in automotive and aerospace industries. This paper addresses the mechanical and tribological properties and corrosion resistance of chromium nitride coatings deposited on Al 5083 that can be used for development of applications of aluminum 5083 alloy. The CrN coatings of 1 μm thickness were deposited b...

2006
Zeljko Pajkic Monika Willert-Porada

Deposition of coatings of aluminum, aluminum nitride and aluminum carbide on particulate carbon materials by means of an atmospheric pressure microwave plasma fluidized bed process is reported. Two types of short carbon fibers and a monocrystalline diamond powder were used as substrate. As source of aluminum trimethylaluminum was utilized with nitrogen and argon/hydrogen (5 vol% H2) serving as ...

Journal: :Journal of the Japan Society of Powder and Powder Metallurgy 1994

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