2014 This paper describes a new method to obtain hydrogenated amorphous semiconductor alloys. The method is reactive co-evaporation. Silicon tin hydrogenated alloys are prepared under atomic hydrogen atmosphere. We discuss the influence of various parameters of preparation (hydrogen pressure, tungsten tube temperature, substrate temperature, annealing...) on electrical properties of samples. Re...

Bipolar resistive switching is demonstrated in the amorphous oxide semiconductor zinc–tin-oxide (ZTO). A gradual forming process produces improved switching uniformity. Al/ZTO/Pt crossbar devices show switching ratios greater than 10, long retention times, and good endurance. The resistive switching in these devices is consistent with a combined filamentary/interfacial mechanism. Overall, ZTO s...

Semiconductor nanoparticles exhibit size dependent properties due to quantum confinement effect that are not present in their bulk counterparts. In this work, extremely fine and pure SnO2 nanoparticles of ~1.1 nm size were synthesized by a solution process, in which amorphous precipitate of SnO2 was crystallized by microwave heating. The particles sizes varied from ~1.1 to ~2.7 nm. By XRD analy...

To improve the spatial resolution of the light-addressable potentiometric sensor (LAPS), it is necessary to reduce the thickness of the semiconductor layer, which, however, causes a problem of the mechanical strength of the sensor plate. In this study, a thin-film LAPS was fabricated with amorphous silicon (a-Si) deposited on a transparent glass substrate. The current-voltage characteristics an...

We report on the surprisingly strong, broadband emission of coherent terahertz pulses from ultrathin layers of semiconductors such as amorphous silicon, germanium and polycrystalline cuprous oxide deposited on gold, upon illumination with femtosecond laser pulses. The strength of the emission is surprising because the materials are considered to be bad (amorphous silicon and polycrystalline cup...

The effect of reduced dimensionality on the shape and position of the first order phonon bands in the Raman scattering spectrum of semiconductors is described. Off-resonance and resonance Raman scattering from semiconductor nanoparticles and superlattices are then considered. Results on nanocrystal size determination, lattice ordering and crystallization of amorphous ultra-thin films, interface...

– Chalcogenide is a proven phase change material used in re-writeable CDs and DVDs. This material changes phases, reversibly and quickly, between an amorphous state that is dull in appearance and electrically high in resistance, and a polycrystalline state that is highly reflective and low in resistance. The application of this commercially proven technology to create dense, high-speed, non-vol...

Thin Nb2O5 anodic films ( 20 nm thick) grown in phosphoric acid solution have been characterised by EIS and differential admittance study in a large range of potential and frequency. The overall electrical behaviour has been interpreted by means of the theory of amorphous semiconductor Schottky barrier in presence of a non-constant density of states (DOS). A comparison of DOS for films grown in...

We propose a method to predict the value of the external strain where a generic amorphous solid will fail by a plastic response (i.e., an irreversible deformation), solely on the basis of measurements of the nonlinear elastic moduli. While usually considered fundamentally different, with the elastic properties describing reversible phenomena and plastic failure epitomizing irreversible behavior...