نتایج جستجو برای: amplifier

تعداد نتایج: 20966  

2015
Lavlesh Sharma Shyam Akashe C. Menolfi

In this paper, reduced power consumption, low-noise CMOS amplifier using chopper technique is designed, chopper-equalized amplifier had been used as a front end of a voltage-to-frequency converter instrument which performs pretty well, and they were meeting just about every specification, but they had a problem with undesired and unpleasant little offset shifts and jumps. Trying to solve this p...

2005
David W. Mann

Mann, David William: 90nm CMOS Driver Amplifier for WCDMA Mobile Applications (Under the direction of Dr. Kevin Gard.) Integration is driving today’s cellular phone industry to create single chip cellphone systems. With the integration of Radio Frequency Transmitters into CMOS technology, robust circuits are needed that can scale with new technologies. This thesis explores the challenges of des...

2016
Mr. P. Ramu G. VR. Sakthivel

The comparator is designed in pipelined ADC. FINFET is the technology which performs the dual gate MOSFET. This thesis focuses on the high-speed design of pipelined ADC. In the meanwhile, we try to minimize the power dissipation as well. In this thesis, A semidigital Gm-based amplifier is proposed for a low-power pipelined analog-to-digital converter (ADC )in HSPICE .And also we compare the pow...

2006
Chia-Hsiung Chang Hermann Lin

A 90-nm wideband (1500-1590nm) optical amplifier consisting of a dispersion-compensated-fiber-based Raman fiber amplifier and a semiconductor optical amplifier with gain clamping and dispersion compensation is demonstrated for wide bandwidth amplification with gain flatness as well as dispersion compensation. 10Gb/s DWDM transmission over 100km conventional single-mode fiber link with low biter...

2012
Raj Kumar Tiwari Anil Kumar Shukla

In this paper design for 1 volt rail to rail supply voltage output of operational amplifier with common mode feedback amplifier has been presented. The circuit has been simulated using BSIM4 model with 50nm CMOS process. The simulation results show that output voltages for the modified operational amplifier are swinging from 10mV to 990mV i.e. between the rail to rail supply voltages (0 to 1V)....

2013
Shruti Jain

In today’s world operational amplifier is used in lot of application. The techniques for achieving high slew rate and high CMRR is by cascading the transistors. This paper focus is on understanding of Operational Trans conductance Amplifier (OTA) and Current Differencing Trans conductance Amplifier (CDTA) with its application as Instrumentation Amplifier (IA) for Biomedical application. We have...

Journal: :IEEE Trans. Industrial Electronics 2001
S. C. Tang Ron Shu-Yuen Hui Henry Shu-Hung Chung

Galvanic isolations are essential in many electrical patient-monitoring devices and industrial applications. In this paper, a low-profile wideband three-port isolation amplifier using coreless printed-circuit-board (PCB) transformers for isolation is studied. The PCB thickness used in the isolation amplifier is 0.4 mm. The diameters of the two coreless PCB transformers are 9.75 and 5.856 mm, re...

2014
K. Rajavardhan Reddy Rama Krishna

In this paper we design the low-power CMOS limiting amplifier using negative impedance, the purpose of using negative impedance is to increase the gain of the amplifier. low-power operations are also done using all the active elements. The LA was implemented in a standard CMOS 0.18um technology. This limiting amplifier is designed for the instrumentation(bio-medical) application. Gain of the am...

2011
Marco Silva Pereira João Caldinhas Vaz

This paper presents a 30dBm (1W) class-E power amplifier projected in a standard 0.18-μm CMOS technology. The power amplifier (PA) consists in two differentials stages. The main stage employs a cascode class-E RF power amplifier with a self-biasing circuit. The driver stage uses the technique of Injection-Locking to substantially reduce the input power signal, maintaining a high gain. At 2.45 G...

2016
Charles F. Campbell Michael D. Roberg Jonathan Fain

This paper describes the design and measured performance of a 1-8GHz power amplifier MMIC fabricated with a 0.15um Gallium Nitride (GaN) process technology. The process features a 100um thick Silicon Carbide (SiC) substrate and compact transistor layouts with individual source grounding vias (ISV). The design utilizes a non-uniform distributed power amplifier (NDPA) topology with a novel trifil...

نمودار تعداد نتایج جستجو در هر سال

با کلیک روی نمودار نتایج را به سال انتشار فیلتر کنید