Silicon together with its native oxide SiO$_2$ was recognized as an outstanding material system for the semiconductor industry in 1950s. In state-of-the-art device technology, is widely used insulator combination high-$k$ dielectrics such HfO$_2$, demanding fabrication of ultra-thin interfacial layers. The classical standard model derived by Deal and Grove accurately describes oxidation Si a pr...

The photodissociation dynamics of strong-field ionized methyl iodide were probed using intense extreme ultraviolet (XUV) radiation produced by the SPring-8 Angstrom Compact free electron LAser.

The realization of flat surfaces on the angstrom scale is required in advanced devices to avoid loss due to carrier (electron and/or photon) scattering. In this work, we have developed a new surface flattening method that involves near-field etching, where optical near-fields (ONFs) act to dissociate the molecules. ONFs selectively generated at the apex of protrusions on the surface selectively...

Nucleic acids and analogues are suitable building blocks for reliable self-assembly of nanometer-sized two- or three-dimensional materials. In order to mimic or approach nature with respect to size and function, Angstrom-scale chemical engineering is emerging as pivotal for future developments. Efforts within nucleic acid nanotechnology will be focussed on generating rigid and stable low nanome...

We present three different methods for the absolute calibration of direct spectral irradiances measured with a Brewer spectroradiometer, which are shown to agree to within +/- 2%. Direct irradiance spectra derived by Brewer and Bentham spectroradiometers agree to within 4 +/- 3%. Good agreement was also found by a comparison of the aerosol optical depth and Angstrom exponent retrieved by the tw...