The luminescence properties of inorganic perovskite CsPbBr3 nanocrystals (NCs) with emissions of 492 and 517 nm under thermal annealing treatment were studied by temperature-dependent photoluminescence (PL) spectroscopy. The CsPbBr3 NCs were annealed in vacuum at various temperatures. It was found that the NCs exhibited significant thermal degradation of PL at thermal annealing temperatures abo...

Samples of HgBa,CuO,+B (Hg-1201) were annealed under various conditions. After carefully controlling annealing time, annealing temperature (T,), and O2 partial pressure (P,), we were able to find the reversible annealing conditions for Hg-1201. Under 1 atm 0, at 260 “C~~,~400 “C, the obtained T, is nearly the same (-97 K). However, it decreases quickly with T,>300 "C in high vacuum (PO-lo-* atm...

Amorphous Si (a-Si) films with metal silicide are expected to enhance the absorption ability of pure a-Si films. In this present study, NiSi (20 nm)/Si (40 nm) and AlSi (20 nm)/Si (40 nm) bilayer thin films are deposited through radio frequency (RF) sputtering at room temperature. The influence of the film's composition and the annealing temperature on the film's optical absorption is investiga...

Grain growth in 40-nm-thick Cu films encapsulated by overand under-layers of SiO2, Al2O3, Si3N4, and MgO was investigated. The films were magnetron sputter deposited onto cooled SiO2/Si substrates in an ultrahigh vacuum purity environment. Ex situ annealing was performed at 400 and 800 °C in 1 atm reducing gas. Films deposited at −120 °C exhibited more extensive grain growth after annealing tha...

Graphene quality indicators obtained by Raman spectroscopy have been correlated to the structural changes of graphene/Germanium interface as a function in-vacuum thermal annealing. Specifically, it is found that graphene becomes markedly defected at 650 {\deg}C. By combining scanning tunneling microscopy, x-Ray Photoelectron Spectroscopy and Near Edge x-ray Absorption Fine Structure Spectroscop...

The electrical and structural properties of Hf/Al/Ni/Au (20/100/25/50 nm) ohmic contact to n-GaN are reported in this study. Specific contact resistivities of Hf/Al/Ni/Au based contacts have been investigated as a function of annealing temperature and achieve the lowest value of 1.09×10 Ω·cm after annealing at 650 C in vacuum. A detailed mechanism of ohmic contact formation is discussed. By usi...

Spin-coated and vacuum sublimed amorphous thin films (;100 nm thick! were converted into single crystalline films with a simple moving-zone-annealing technique, in which a heated metal wire generated a narrow annealed zone in the film as it is moved across the sample. This annealing resulted in both the photoluminescence and electroluminescence to increase dramatically ~by 3–4 times!, for examp...

We investigated the effect of annealing in a hydrogen atmosphere on carbon nanocap formation during decomposition of a 6H-SiC(000-1) surface. It was determined that native oxides were reduced to below the detection limit of X-ray photoelectron spectroscopy after 30 min of annealing at 1200 degrees C in a hydrogen atomosphere at 10(-3) Pa. In addition, we found that the homogeneity of carbon nan...

Ohmic and Schottky contacts are playing a major role in the field of ZnO based electronics device fabrication. It is seen that several works have been reported on metallization scheme, contacts with this semiconducting material. But, the thickness of semiconducting material and the choosing of substrate still remain imperfect and inefficient for advanced IC technology. To estimate contact resis...