نتایج جستجو برای: antireflection coating
تعداد نتایج: 37529 فیلتر نتایج به سال:
Efficiency improvement of InGaP/GaAs/Ge solar cells by hydrothermal-deposited ZnO nanotube structure
In this paper, a zinc oxide (ZnO) nanotube, fabricated by the hydrothermal growth method on triple-junction (T-J) solar cell devices to enhance efficiency, is investigated. Compared to those of bare T-J solar cells (without antireflection (AR) coating) and solar cells with Si3N4 AR coatings, the experimental results show that the T-J solar cells, which use a ZnO nanotube as an AR coating, have ...
An empirically derived formula, which can be used to predict the average residual reflection that can be expected from an antireflection (AR) coating design as a function of bandwidth, overall thickness, available indices of the coating materials, number of layers, etc., is presented. This formula can be a useful tool not only for the thin-film designer but also for the nondesigner or system en...
In this study, Silicon Dioxide (SiO2) thin films processed by the spin coating method was studied with prepared solutions. Antireflection effect of deposited SiO2 on crystalline silicon substrates analyzed after optimizing solution, deposition, and thermal treatment processes. The ethanol dilution solution investigated as well. Spectrophotometer reflectance measurements, Scanning Electron Micro...
Large-area subwavelength dielectric hexagonal lattices of cylindrical pillars on quartz substrates that provide high optical transmittance at all angles of incidence under different polarizations of light, and are fabricated using lowcost patterning techniques, are demonstrated and analyzed. Transmittance >85% for angles of incidence in excess of 70° is demonstrated at visible and near-infrared...
The possibility of using a nanoporous Ge layer formed by implantation with 115 In + ions on monocrystal c-Ge substrate as an antireflection optical coating (In:PGe) was studied. For this purpose, ion wafers performed at energy E=30 keV, current density in the beam J=5 μA/cm 2 , and dose D=1.8· 10 16 ion/cm . It shown that fabricated In:PGe spongy layer, which consists intertwining nanowires, is...
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