the split-block experimental design with three replications was used to study the effect of subsoiling in different distances from drain axison soil salinity,and wheat yield. the measurements included soil cone index, soil bulkdensity, infiltration rate and electrical conductivity of saturated extract. each treatment was composed of two factors. the main factors consisted of 3 different distanc...

introduction: better use of water and soil resources in paddy fields, increase in rice production and farmer's income, installation of subsurface drainage system is necessary. the main goalof these systems, are aeration conditions improvement prevention of water logging, yield increase, land use increase and multiuse of the land. in different countries, installation of subsurface drainage cause...

Among multi-gate field effect transistor (FET) structures, FinFET has better short channel control and ease of manufacturability when compared to other conventional bulk devices. The radio frequency (RF) performance of FinFET is affected by gate-controlled parameters such as transconductance, output conductance, and total gate capacitance. In recent years, high-k spacer dielectric materials for...

Stages in nuclear division have been identified in sections of bloodstream and cultured trypanosomes examined with the electron microscope In the sleeping sickness trypanosome Trypanosoma rhodesiense at division the nuclear envelope and nucleolus-like endosome persist and become stretched along an axis. An acentric spindle of microtubules encases the elongating endosome As division proceeds the...

This paper presents the design of an asymmetrical Doherty power amplifier (DPA) with improved linearity and efficiency performance. Resonator-type drain bias networks, providing high impedances at the carrier frequency and low impedances with small variation at the envelope frequency, are introduced to reduce the DPA’s memory effects when transmitting wideband signals. The general criteria for ...

Symmetric and fast (~ 5 ms) on-to-off and off-to-on drain current switching characteristics have been obtained in screen printed organic electrochemical transistors (OECT) including PEDOT:PSS (poly(3,4-ethylenedioxythiophene) doped with poly(styrene sulfonic acid)) as the active transistor channel material. Improvement of the drain current switching characteristics is made possible by including...

Heterostructure field-effect transistor design criteria are proposed in this study. GaAs pseudomorphic high electron mobility transistors (pHEMTs) are extensively applied to radar satellite receipt dispatcher antenna, and cell phone. Devices for various doped type and different material heterostructure are simulated and analyzed. The δ-doped InGaP/InGaAs/GaAs pHEMT with high density of two dime...

Effect of a polarized P(VDF-TrFE) ferroelectric polymer gating on AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) was investigated. The P(VDF-TrFE) gating in the source/drain access regions of AlGaN/GaN MOS-HEMTs was positively polarized (i.e., partially positively charged hydrogen were aligned to the AlGaN surface) by an applied electric field, resulting in a...