We work out a theory of the Coulomb drag current created under the ballistic transport regime in a one-dimensional nanowire by a ballistic non-Ohmic current in a nearby parallel nanowire. As in the Ohmic case, we predict sharp oscillation of the drag current as a function of gate voltage or the chemical potential of electrons. We also study dependence of the drag current on the voltage V across...

One of the most important physical parameters to describe the quality of a piece of semiconductor material is the electron scattering length le. Also referred to as the mean-free path, it stands for the average distance between the randomly distributed scatterers in the material, such as lattice defects, impurities, and phonons. The electron mean-free path is typically a few nanometers (1 nm = ...

We introduce improved numerical techniques for simulating the structural and compositional evolution of planetary rings due to micrometeoroid bombardment and subsequent ballistic transport of impact ejecta. Our current, robust code is capable of modeling structural changes and pollution transport simultaneously over long times on both local and global scales. In this paper, we describe the meth...

Intense electron-phonon scattering near the peak electric field in a semiconductor device results in nanometer-scale phonon hotspots. Past studies have argued that ballistic phonon transport near such hotspots serves to restrict heat conduction. We reexamine this assertion by developing a new phonon transport model. In a departure from previous studies, we treat isotropic dispersion in all phon...