0026-2714/$ see front matter 2011 Elsevier Ltd. A doi:10.1016/j.microrel.2011.05.010 ⇑ Corresponding author. Tel.: +90 312 2021247; fax E-mail address: [email protected] (S. Demir In order to explain the experimental effect of interface states (Nss) and series resistance (Rs) of device on the non-ideal electrical characteristics, current–voltage (I–V), capacitance–voltage (C–V) and conduc...

Article history: Received 23 May 2015 Accepted 16 June 2015 Available online xxxx Weperformed thermal and constant voltage stress on oligothiophene-based p-type organic thin-film-transistors. The devices subjected to thermal stress without bias showed limited variations. The bias stress performed at 20 °C inducedmonotonic charge trapping, andmobility degradation. The devices subjected to simult...

A three-level six-factor (arc power, substrate temperature, pre-treatment bias voltage, working pressure, deposition bias voltage and pretreatment time) orthogonal experimental array (L18) to optimize the adhesion strength of arc ion plating (AIP) TiAlN films was designed using the Taguchi method. An optimized film process, namely substrate temperature 220 °C, arc power 60 A, negative bias volt...

Current collapse effects in an Al0.25Ga0.75N/GaN HFET have been investigated under pulsed bias conditions, and a detailed investigation of current responses to changes in drain or gate bias voltage (drain-lag and gate-lag, respectively) has been performed. Three components of transient current response to changes in drain and gate bias voltages are distinguished. Surface treatment using KOH etc...

This paper explores the experimental issues associated with the implementation of the recently developed generalized complementary flux constraint (GCFC) flux-biasing scheme on a spacecraft reaction wheel that is magnetically suspended by a low-loss active magnetic bearing (AMB). Implementation of the GCFC depends fundamentally on the ability to estimate the electromagnet flux. Once addressed, ...

In this paper, a 0.18-V input three-stage charge pump circuit applying forward body bias is proposed for energy harvesting applications. In the developed charge pump, all the MOSFETs are forward body biased by using the inter-stage/output voltages. By applying the proposed charge pump as the startup in the boost converter, the kick-up input voltage of the boost converter is reduced to 0.18 V. T...

Numerous studies have examined the switching properties of semi- or ion-conductors and isolators; however, most of these have focused on the ohmic resistance characteristics. Here, we report a new type of polarity-dependent switching phenomenon obtained for electrical devices with the configuration: metal working electrode│Si0.97Al0.03H0.03P2O7-polytetrafluoroethylene composite electrolyte│Pt/C...

A theoretical model to interpret appearances of the threshold voltage shift in hydrogenated amorphous silicon (a-Si:H) thin film transistors (TFT’s) is developed to better understand the instability of a-Si:H TFT’s for the driving transistors in active matrix organic light-emitting diode (AMOLED) displays. This model assumes that the defect creation is proportional to the carrier density in a-S...

In order to cope with the increasing leakage power and the increasing device variability in VLSI’s, the required control size of both the space-domain and the time-domain is decreasing. This paper shows the several recent fine-grain voltage engineerings for the low power VLSI circuit design. The space-domain fine-grain voltage engineering includes the fine-grain power supply voltage with 3D-str...

In this paper, the noise equivalent power (NEP) of an optical sensor based ongraphene-superconductor junctions in the constant current mode of operation has beencalculated. Furthermore, the necessary investigations to optimize the device noise withrespect to various parameters such as the operating temperature, magnetic field, deviceresistance, voltage and current bias have been presented. By s...