We report a CVD hexagonal boron nitride (hBN-) assisted transfer method that enables a polymer-impurity free transfer process and subsequent top encapsulation of large-area CVD-grown graphene. We demonstrate that the CVD hBN layer that is utilized in this transfer technique acts as a buffer layer between the graphene film and supporting polymer layer. We show that the resulting graphene layers ...

Electronic structures of zigzag edged graphene nanoribbons (ZGNRs) doped with boron (B) or nitrogen (N) atoms are investigated by spin polarized first-principles calculations. We find that ZGNRs can be tuned to be either semiconducting, half-metallic, or metallic by controlling the distance of the impurity atoms to the edges. A new scheme is identified to achieve full half-metallicity in ZGNRs ...

Abstract The “C/O Monitor” for Wendelstein 7-X (W7-X) is a dedicated light impurity XUV spectrometer intended to measure Lyman-α transitions of hydrogen-like ions four low-Z impurities—boron (4.9 nm), carbon (3.4 nitrogen (2.5 nm) and oxygen (1.9 nm). Since the discussed diagnostic will deliver continuous information about line intensities, it crucial understand origin obtained signals with res...

We present the results of first principles molecular dynamics simulations of nitrogen vacancy complexes in monolayer hexagonal boron nitride. The threshold for local structure reconstruction is found to be sensitive to the presence of a substitutional carbon impurity. We show that activated nitrogen dynamics triggers the annihilation of defects in the layer through formation of Stone-Wales-type...

boron toxicity usually occurs in arid and saline soils. among all the pollutant'sresource, irrigation water is the most important factor in boron elevating in the soil.modification of boron-rich soils is difficult and in this case, resistant varieties can playan important role in increasing the cultivation in areas with high boron level. to assessthe effects of different concentrations of ...

Low frequency 1/f noise is investigated in graphene, encapsulated between the hexagonal boron nitride (hBN) substrate dual gated geometry. The overall magnitude smaller as compared to graphene on Si/SiO2 substrate. amplitude hole doped region independent of carrier density, while electron region, a pronounced peak observed at Fermi energy, EF?90 meV. physical mechanism anomalous attributed impu...

In this paper, the effect of pressure, temperature and impurity on the energylevels, binding energy, linear and nonlinear optical properties of a modified Gaussianquantum dot are studied. In this regard, the finite element method is employed to solvethe single electron Schrodinger equation in the effective mass approximation with andwithout impurity at the center of the dot. In addition, the en...

Impurities in industrial silicon strongly affect the performance and appliance of products, so raw must be refined to reduce impurity content improve its quality. In this work, slag agent CaO-SiO2-CaCl2 mixed Ar-H2O-O2 gas were used refine a high-temperature blowing furnace. The effects slagging refining conditions on removal studied. chemical composition agent, mass ratio silicon, time tempera...