نتایج جستجو برای: breakdown voltage

تعداد نتایج: 136077  

2012
Ahmed Emira Mohannad Elsayed Sherif Sedky Khaled Salama

In this work, two high-voltage charge pumps are introduced. In order to minimize the area of the pumping capacitors, which dominates the overall area of the charge pump, high density capacitors have been utilized. Nonetheless, these high density capacitors suffer from low breakdown voltage which is not compatible with the targeted high voltage application. To circumvent the breakdown limitation...

Journal: :Nanoscale 2012
Hagay Shpaisman Hagai Cohen Rotem Har-Lavan Daniel Azulai Nir Stein David Cahen

Electrical transport studies across nm-thick dielectric films can be complicated, and datasets compromised, by local electrical breakdown enhanced by nm-sized features. To avoid this problem we need to know the minimal voltage that causes the enhanced electrical breakdown, a task that usually requires numerous measurements and simulation of which is not trivial. Here we describe and use a model...

2017
Xiaoxing Zhang Shuangshuang Tian Song Xiao Zaitao Deng Yi Li Ju Tang

This paper explores the decomposition characteristics of a new type of environmentally friendly insulating gas C6F12O and N2 mixed gas under AC voltage. The breakdown behavior of 3% C6F12O and N2 mixed gas in quasi-uniform field was investigated through a breakdown experiment. The self-recovery of the mixed gas was analyzed by 100 breakdown experiments. The decomposition products of C6F12O and ...

Journal: :Optics express 2014
Xiao Meng Chee Hing Tan Simon Dimler John P R David Jo Shien Ng

An InGaAs/InAlAs Single Photon Avalanche Diode was fabricated and characterized. Leakage current, dark count and photon count measurements were carried out on the devices from 260 to 290 K. Due to better temperature stability of avalanche breakdown in InAlAs, the device breakdown voltage varied by < 0.2 V over the 30 K temperature range studied, which corresponds to a temperature coefficient of...

2009
M Wendt S Peters D Loffhagen A Kloss M Kettlitz

An investigation of the breakdown of high intensity discharge (HID) lamps filled with xenon at pressures from 0.1 to 5 bar is presented. Three power supplies were used in order to provide voltage rates of increase covering about four orders of magnitude from 5 mV ns−1 to 100 V ns−1, the latter being typical for electronic ballasts driving commercial HID lamps. Customized lamps ensure a volume b...

Journal: :Èlektronnaâ obrabotka materialov 2022

This work deals with the influence of parameters working fluid (hydrostatic pressure, temperature, electrical conductivity) and geometry electrode system (the length interelectrode gap uninsulated part anode) on pre-breakdown characteristics an electric discharge in a liquid aqueous electrolyte (breakdown voltage breakdown delay time) minimum charging voltage, which provides stable high-voltage...

2014
Parag Parashar Ashoke Kumar Chatterjee

The present work aims at the design of 3C-SiC Double Implanted Metal Oxide Semiconductor Field Effect Transistor (DIMOSFET) with Gaussian doping profile in drift region for high breakdown voltages. By varying the device height ‘h’, function constant m and peak concentration N0, analysis has been done for an optimum profile for high breakdown voltage. With Gaussian profile peak concentration N0 ...

2001
Y. Mitani A. Wakabayashi

Effects of surface states on breakdown characteristics of narrowly-recessed-gate GaAs MESFETs are studied by two-dimensional simulation. Particularly, it is discussed how the characteristics depend on the surface-state densities and on the recess structure parameters. It is shown that the breakdown voltage could be raised when moderate densities of surface states are included. However, it is su...

2014
Ya-Ju Lee Yung-Chi Yao Chun-Ying Huang Tai-Yuan Lin Li-Lien Cheng Ching-Yun Liu Mei-Tan Wang Jung-Min Hwang

In this paper, we numerically study an enhancement of breakdown voltage in AlGaN/GaN high-electron-mobility transistors (HEMTs) by using the AlGaN/GaN/AlGaN quantum-well (QW) electron-blocking layer (EBL) structure. This concept is based on the superior confinement of two-dimensional electron gases (2-DEGs) provided by the QW EBL, resulting in a significant improvement of breakdown voltage and ...

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